Datasheet > GF200HF120T2VHE

GF200HF120T2VHE

更新时间： 2024-11-06 17:15:31

品牌	Logo	应用领域
银茂微 - SILVERMICRO		双极性晶体管
页数	文件大小	规格书
7页	564K
描述
IGBT Half Bridge-1200V

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GF200HF120T2VHE 数据手册

GF200HF120T2VHE

Preliminary Data

IGBT Module

Features：

Short Circuit Rated ＞10μs

Low Saturation Voltage:

_{CE (sat)}= 3.30V @ I_C= 200A , T_C=25℃

Low Switching Loss

100% RBSOA Tested（2×Ic）

Low Stray Inductance

Lead Free, Compliant with RoHS Requirement

Applications：

Welding Machine/ Cutting Machine

Induction Heating

Ultrasonic Device

Maximum Rated Values of IGBT(T_C=25℃ unless otherwise specified)

V_CES

V_GES

Collector-Emitter Blocking Voltage

Gate-Emitter Voltage

1200

±20

T_C= 80℃,

T_C= 25℃

T_J= 150℃

200

330

400

>10

1435

I_C

Continuous Collector Current

I_CM

t_SC

P_D

Repetitive Peak Collector Current

Short Circuit Withstand Time

μs

T_C= 25℃

T_Jmax=150℃

Maximum Power Dissipation per IGBT

www.njsme.com

Page 1 Rev. 01

05/02/2015

12 3 4 5 6 7

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