Datasheet > GETG0130

GETG0130

更新时间： 2022-05-08 18:53:43

品牌	Logo	应用领域
GPSEMI		可控硅
页数	文件大小	规格书
2页	115K
描述
PHASE CONTROLLED SCR

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数据手册

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GETG0130 数据手册

Phone: +39-010-659 1869

Fax: +39-010-659 1870

Web: www.gpsemi.it

Green Power Solutions srl

Via Greto di Cornigliano 6R - 16152 Genova , Italy

E-mail: info@gpsemi.it

GETG0130

PHASE CONTROLLED SCR

Plastic case

DC power supply

AC drives

VOLTAGE UP TO

600 V

AVERAGE CURRENT

SURGE CURRENT

1300 A

12,8 kA

BLOCKING CHARACTERISTICS

Characteristic

Conditions

Value

V^RRM

Repetitive peak reverse voltage

600

700

600

V^RSM

V^DRM

Non-repetitive peak reverse voltage

Repetitive peak off-state voltage

Repetitive peak off-state current, max.

Repetitive peak reverse current, max.

I^DRM

I^RRM

V^DRM, single phase, half wave, Tj = Tjmax

V^RRM, single phase, half wave, Tj = Tjmax

100 mA

ON-STATE CHARACTERISTICS

I^T(AV)

Average on-state current

R.M.S. on-state current

Surge on-state current

I² t for fusing coordination

Threshold voltage

Sine wave,180° conduction, Th = 55 °C

Non rep. half sine wave, 50 Hz, V^R= 0 V, T^j= T^jmax

1300

2041

12,8 kA

I^T(RMS)

I^TSM

I²t

819 kA²s

V^T(TO)

T^j= T^jmax

0,87

0,238

1,56

600 mA

1000 mA

mΩ

r^T

On-state slope resistance

Peak on-state voltage, max

Holding current, max

V^TM

On-state current I^T=

2900 A , Tj = Tjmax

I^H

I^L

T^j= 25 °C

Latching current, typ

TRIGGERING CHARACTERISTICS

V^GT

T^j= 25 °C, V^D= 5 V

Gate trigger voltage

2,5

190 mA

I^GT

Gate trigger current

V^GD

P^GM

P^G(AV)

I^FGM

V^D= 67% V^RRM, T^j= T^jmax

Pulse width 0.5 ms

Non-trigger voltage

0,25

Peak gate power dissipation

Average gate power dissipation

Peak gate current

V^FGM

V^RGM

Peak gate voltage (forward)

Peak gate voltage (reverse)

SWITCHING CHARACTERISTICS

T^j= T^jmax- non repetitive

T^j= T^jmax

T^j= T^jmax, I^T= 320 A, di/dt = -12.5 A/µs

VR = 100 V, VD = 67% VDRM, dV/dt = 20 V/µs

di/dt

Critical rate of rise of on-state current

Critical rate of rise of off-state voltage

Turn-off time, typ

1000 A/µs

500 V/µs

µs

dV/dt

t^q

THERMAL AND MECHANICAL CHARACTERISTICS

R^th(j-c)

Thermal resistance (junction to case)

Thermal resistance (case to heatsink)

Max operating junction temperature

Storage temperature

Double side cooled

0,034 °C/W

0,010 °C/W

150 °C

R^th(c-h)

T^jmax

T^stg

-30 / 150 °C

9,8 kN

Clamping force ± 10%

Mass

85 g

Document GETG0130T001

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