Datasheet > GE28F640W30T85

GE28F640W30T85

更新时间： 2024-11-24 23:53:39

品牌	Logo	应用领域
其他 - ETC		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
91页	974K
描述
EEPROM\|FLASH\|4MX16\|CMOS\|BGA\|56PIN\|PLASTIC

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中文翻译

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数据手册

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GE28F640W30T85 数据手册

1.8 Volt Intel^®Wireless Flash Memory

with 3 Volt I/O

28F320W30, 28F640W30, 28F128W30

Datasheet

Product Features

■ High Performance Read-While-Write/Erase

— Burst Frequency at 40 MHz

— 70 ns Initial Access Speed

— 25 ns Page-Mode Read Speed

— 20 ns Burst-Mode Read Sp eed

— Burst and Page Mode in All Blocks and

across All Partition Boundaries

— Burst Suspend Feature

■ Flash Architecture

— Multiple 4-Mbit Partitions

— Dual Operation: RWW or RWE

— Parameter Block Size = 4-Kword

— Main block size = 32-Kword

— Topand Bottom Parameter Devices

■ Flash Software

— 5/9 µs (typ.) Program/Erase Suspend Latency

Time

— Enhanced Factory Programming:

3.5 µs per Word Program Time

— Programmable WAIT Signal Polarity

■ Quality and Reliability

— Intel^®Flash Data Integrator (FDI) and

Common Flash Interface (CFI) Compatible

■ Flash Power

— Operating Temperature:

— V_CC= 1.70 V – 1.90 V

–40 °C to +85 °C

— V_CCQ= 2.20 V – 3.30 V

— Standby Current = 6 µA (typ.)

— Read Current = 7 mA

— 100K Minimum Erase Cycles

— 0.13 µm ETOX™ VII Process

■ Flash Security

(4 word burst, typ.)

— 128-bit Protection Register: 64 Unique Device ■ Density and Packaging

Identifier Bits; 64 User OTP Protection

— 32-, 64-, and 128-Mbit Densities in VF BGA

Package

— Absolute Write Protection with V_PPat Ground

— Program and Erase Lockout during Power

Transitions

— 56 Active Ball Matrix, 0.75 mm Ball-Pitch in

VF BGA Packages

— 16-bit Data Bus

— Individual and Instantaneous Block Locking/

Unlocking with Lock-Down

The 1.8 Volt Intel^®Wireless Flash Memory with 3 Volt I/O combines state-of-the-art Intel^®Flash technology to

provide the most versatile memory solution for high performance, low power, board constraint memory

applications.

The 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O offers a multi-partition, dual-operation flash architecture

that enables the device to read from one partition while programming or erasing in another partition. This Read-

While-Write or Read-While-Erase capability makes it possible to achieve higher data throughput rates as compared

to single partition devices and it allows two processors to interleave code execution because program and erase

operations can now occur as background processes.

The 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O incorporates a new Enhanced Factory Programming

(EFP) mode to improve 12 V factory programming performance. This new feature helps eliminate manufacturing

bottlenecks associated with programming high density flash devices. Compare the EFP program time of 3.5 µs per

word to the standard factory program time of 8.0 µs per word and save significant factory programming time for

improved factory efficiency.

Additionally, the 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O includes block lock-down, programmable

WAIT signal polarity and is supported by an array of software tools. All these features make this product a perfect

solution for any demanding memory application.

Notice: This document contains information on new products in production. The specifications

are subject to change without notice. Verify with your local Intel sales office that you have the lat-

est datasheet before finalizing a design.

290702-004

April 2002

12 3 4 5 6 7...91

中文翻译

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与GE28F640W30T85相关器件

型号	品牌	获取价格	描述	数据表
GE28F640W30TC85	NUMONYX	获取价格	Flash, 4MX16, 85ns, PBGA56
GE28F640W30TD70	NUMONYX	获取价格	Flash, 4MX16, 70ns, PBGA56, 0.75 MM PITCH, VFBGA-56
GE28F800B3BA70	INTEL	获取价格	Flash, 512KX16, 70ns, PBGA48, VFBGA-48
GE28F800B3BA70	NUMONYX	获取价格	Flash, 512KX16, 70ns, PBGA48, VFBGA-48
GE28F800B3BA90	INTEL	获取价格	3 Volt Advanced Boot Block Flash Memory
GE28F800B3TA70	NUMONYX	获取价格	Flash, 512KX16, 70ns, PBGA48, VFBGA-48
GE28F800B3TA70	INTEL	获取价格	Flash, 512KX16, 70ns, PBGA48, VFBGA-48
GE28F800B3TA90	INTEL	获取价格	3 Volt Advanced Boot Block Flash Memory
GE28F800C3BA70	INTEL	获取价格	Advanced+ Boot Block Flash Memory (C3)
GE28F800C3BA90	INTEL	获取价格	Advanced+ Boot Block Flash Memory (C3)

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