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GE28F640W30BD70 PDF预览

GE28F640W30BD70

更新时间： 2024-11-25 20:38:19
品牌 Logo 应用领域
恒忆 - NUMONYX 内存集成电路闪存
页数 文件大小 规格书
104页 1443K
描述
Flash, 4MX16, 70ns, PBGA56, 0.75 MM PITCH, VFBGA-56

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GE28F640W30BD70 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：BGA包装说明：VFBGA, BGA56,7X8,30
针数：56Reach Compliance Code：unknown
ECCN代码：3A991.B.1.AHTS代码：8542.32.00.51
风险等级：5.23最长访问时间：70 ns
其他特性：SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE启动块：BOTTOM
命令用户界面：YES通用闪存接口：YES
数据轮询：NOJESD-30 代码：R-PBGA-B56
长度：9 mm内存密度：67108864 bit
内存集成电路类型：FLASH内存宽度：16
湿度敏感等级：1功能数量：1
部门数/规模：8,127端子数量：56
字数：4194304 words字数代码：4000000
工作模式：ASYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：4MX16
封装主体材料：PLASTIC/EPOXY封装代码：VFBGA
封装等效代码：BGA56,7X8,30封装形状：RECTANGULAR
封装形式：GRID ARRAY, VERY THIN PROFILE, FINE PITCH页面大小：4 words
并行/串行：PARALLEL峰值回流温度（摄氏度）：225
电源：1.8,3 V编程电压：1.8 V
认证状态：Not Qualified座面最大高度：1 mm
部门规模：4K,32K最大待机电流：0.000005 A
子类别：Flash Memories最大压摆率：0.04 mA
最大供电电压 (Vsup)：1.9 V最小供电电压 (Vsup)：1.7 V
标称供电电压 (Vsup)：1.8 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子形式：BALL端子节距：0.75 mm
端子位置：BOTTOM处于峰值回流温度下的最长时间：NOT SPECIFIED
切换位：NO类型：NOR TYPE
宽度：7.7 mmBase Number Matches：1

GE28F640W30BD70 数据手册

 浏览型号GE28F640W30BD70的Datasheet PDF文件第2页浏览型号GE28F640W30BD70的Datasheet PDF文件第3页浏览型号GE28F640W30BD70的Datasheet PDF文件第4页浏览型号GE28F640W30BD70的Datasheet PDF文件第5页浏览型号GE28F640W30BD70的Datasheet PDF文件第6页浏览型号GE28F640W30BD70的Datasheet PDF文件第7页 
Intel® Wireless Flash Memory (W30)  
28F640W30, 28F320W30, 28F128W30  
Datasheet  
Product Features  
■ High Performance Read-While-Write/Erase  
— Burst Frequency at 40 MHz  
— 70 ns Initial Access Speed  
■ Flash Architecture  
— Multiple 4-Mbit Partitions  
— Dual Operation: RWW or RWE  
— Parameter Block Size = 4-Kword  
— Main block size = 32-Kword  
— Top or Bottom Parameter Blocks  
■ Flash Security  
— 25 ns Page-Mode Read Speed  
— 20 ns Burst-Mode Read Speed  
— Burst-Mode and Page-Mode in All Blocks  
and across All Partition Boundaries  
— Burst Suspend Feature  
— 128-bit Protection Register: 64 Unique  
Device Identifier Bits; 64 User OTP  
Protection Register Bits  
— Enhanced Factory Programming:  
3.5 µs per Word Program Time  
— Programmable WAIT Signal Polarity  
■ Flash Power  
— Absolute Write Protection with V at  
PP  
Ground  
— V = 1.70 V – 1.90 V  
— Program and Erase Lockout during Power  
CC  
— V  
= 2.20 V – 3.30 V  
Transitions  
CCQ  
— Standby Current (130 nm) = 8 µA (typ.)  
— Read Current = 7 mA  
— Individual and Instantaneous Block  
Locking/Unlocking with Lock-Down  
■ Density and Packaging  
(4 word burst, typical)  
■ Flash Software  
— 130 nm: 32Mb, 64Mb, and 128Mb in VF  
BGA Package; 64Mb, 128Mb in QUAD+  
Package  
— 180 nm: 32Mb and 128Mb Densities in VF  
BGA Package; 64Mb Density in µBGA*  
Package  
— 5 µs/9 µs (typ.) Program/Erase Suspend  
Latency Time  
— Intel® Flash Data Integrator (FDI) and  
Common Flash Interface (CFI) Compatible  
■ Quality and Reliability  
— Operating Temperature:  
— 56 Active Ball Matrix, 0.75 mm Ball-Pitch  
–40 °C to +85 °C  
— 16-bit Data Bus  
— 100K Minimum Erase Cycles  
— 130 nm ETOX™ VIII Process  
— 180 nm ETOX™ VII Process  
The Intel® Wireless Flash Memory (W30) device combines state-of-the-art Intel® Flash technology to  
provide a versatile memory solution for high performance, low power, board constraint memory  
applications. The W30 flash memory device offers a multi-partition, dual-operation flash architecture  
that enables the flash device to read from one partition while programming or erasing in another partition.  
This Read-While-Write or Read-While-Erase capability makes it possible to achieve higher data  
throughput rates compared to single partition devices. Two processors can interleave code execution,  
because program and erase operations can now occur as background processes.  
The W30 flash memory device incorporates an Enhanced Factory Programming (EFP) mode to improve  
12 V factory programming performance. This feature helps eliminate manufacturing bottlenecks associated  
with programming high-density flash memory devices. The EFP program time is 3.5 µs per word,  
compared to the standard factory program time of 8.0 µs per word, so EFP mode saves significant factory  
programming time for improved factory efficiency.  
The W30 flash memory device also includes block lock-down and programmable WAIT signal polarity,  
and is supported by an array of software tools.  
Notice: This document contains information on new products in production. The specifications  
are subject to change without notice. Verify with your local Intel sales office that you have the  
latest datasheet before finalizing a design.  
Order Number: 290702, Revision: 011  
June 2005  
1234567...104

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GE28F640W30TD70 NUMONYX

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GE28F800B3BA70 INTEL

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 		Flash, 512KX16, 70ns, PBGA48, VFBGA-48
GE28F800B3BA70 NUMONYX

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 		Flash, 512KX16, 70ns, PBGA48, VFBGA-48
GE28F800B3BA90 INTEL

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 		3 Volt Advanced Boot Block Flash Memory
GE28F800B3TA70 NUMONYX

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 		Flash, 512KX16, 70ns, PBGA48, VFBGA-48
GE28F800B3TA70 INTEL

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GE28F800B3TA90 INTEL

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 		3 Volt Advanced Boot Block Flash Memory

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