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GE28F320W30TC85 PDF预览

GE28F320W30TC85

更新时间: 2024-11-26 07:06:03
品牌 Logo 应用领域
恒忆 - NUMONYX /
页数 文件大小 规格书
102页 1395K
描述
Flash, 2MX16, 85ns, PBGA56

GE28F320W30TC85 数据手册

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Numonyx™ Wireless Flash Memory (W30)  
28F640W30, 28F320W30, 28F128W30  
Datasheet  
Product Features  
„ High Performance Read-While-Write/Erase  
— Burst Frequency at 40 MHz  
„ Flash Architecture  
— Multiple 4-Mbit Partitions  
— Dual Operation: RWW or RWE  
— Parameter Block Size = 4-Kword  
— Main block size = 32-Kword  
Top or Bottom Parameter Blocks  
„ Flash Security  
— 70 ns Initial Access Speed  
— 25 ns Page-Mode Read Speed  
— 20 ns Burst-Mode Read Speed  
— Burst-Mode and Page-Mode in All Blocks  
and across All Partition Boundaries  
— Burst Suspend Feature  
— 128-bit Protection Register: 64 Unique  
Device Identifier Bits; 64 User OTP  
Protection Register Bits  
— Enhanced Factory Programming:  
3.5 µs per Word Program Time  
— Programmable WAIT Signal Polarity  
„ Flash Power  
— Absolute Write Protection with VPP at  
Ground  
— Program and Erase Lockout during Power  
Transitions  
— Individual and Instantaneous Block  
Locking/Unlocking with Lock-Down  
— VCC = 1.70 V – 1.90 V  
— VCCQ = 2.20 V – 3.30 V  
— Standby Current (130 nm) = 8 µA (typ.)  
— Read Current = 7 mA  
(4 word burst, typical)  
„ Density and Packaging  
— 130 nm: 32Mb, 64Mb, and 128Mb in VF  
BGA Package; 64Mb, 128Mb in QUAD+  
Package  
— 180 nm: 32Mb and 128Mb Densities in VF  
BGA Package; 64Mb Density in µBGA*  
Package  
„ Flash Software  
— 5 µs/9 µs (typ.) Program/Erase Suspend  
Latency Time  
— Numonyx™ Flash Data Integrator (FDI) and  
Common Flash Interface (CFI) Compatible  
„ Quality and Reliability  
— 56 Active Ball Matrix, 0.75 mm Ball-Pitch  
— 16-bit Data Bus  
— Operating Temperature:  
–40 °C to +85 °C  
— 100K Minimum Erase Cycles  
— 130 nm ETOX™ VIII Process  
— 180 nm ETOX™ VII Process  
Order Number: 290702-13  
November 2007  

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