Datasheet > GDZJ3.6

GDZJ3.6

更新时间： 2024-11-25 07:01:15

品牌	Logo	应用领域
DIOTECH		稳压二极管
页数	文件大小	规格书
5页	1964K
描述
500mW EPITAXIAL ZENER DIODE

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中文翻译

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数据手册

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GDZJ3.6 数据手册

GDZJ - SERIES

500mW EPITAXIAL ZENER DIODE

FEATURES

• Planar die construction

DO-35

• 500mW Power Dissipation

• Ideally Suited for Automated Assembly Processes

• High temperature soldering : 260°C /10 seconds at terminals

• Glass package has Underwriters Laboratory Flammability

Classification

• In compliance with EU RoHS 2002/95/EC directives

MECHANICAL DATA

• Case: Molded Glass DO-35

• Terminals: Axial leads, solderable per MIL-STD-202G, Method 208

• Polarity: See Diagram Below

• Mounting position:Any

• Weight: 0.13 gram

All Dimensions in mm

ABSOLUTE MAXIMUM RATINGS(LIMITING VALUES)(TA=25℃)

Symbols

Value

Units

Zener current see table "Characteristics"

Power dissipation at TA=25℃

Junction temperature

500

175

Ptot

℃

-65 to +175

Storage temperature range

TSTG

1)Valid provided that a distance of 8mm from case are kept at ambient temperature

ELECTRCAL CHARACTERISTICS(TA=25℃)

Symbols

RthA

Min

Typ

Max

0.3

Units

K / mW

Thermal resistance junction to ambient

Forward voltage at IF=100mA

1.0

1) Valid provided that a distance at 8mm from case are kept at ambient temperature

12 3 4 5

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