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GDZJ2.0 PDF预览

GDZJ2.0

更新时间: 2024-11-05 07:01:15
品牌 Logo 应用领域
DIOTECH 稳压二极管
页数 文件大小 规格书
5页 1964K
描述
500mW EPITAXIAL ZENER DIODE

GDZJ2.0 数据手册

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GDZJ - SERIES  
500mW EPITAXIAL ZENER DIODE  
FEATURES  
Planar die construction  
DO-35  
500mW Power Dissipation  
Ideally Suited for Automated Assembly Processes  
High temperature soldering : 260°C /10 seconds at terminals  
Glass package has Underwriters Laboratory Flammability  
Classification  
In compliance with EU RoHS 2002/95/EC directives  
MECHANICAL DATA  
Case: Molded Glass DO-35  
Terminals: Axial leads, solderable per MIL-STD-202G, Method 208  
Polarity: See Diagram Below  
Mounting position:Any  
Weight: 0.13 gram  
All Dimensions in mm  
ABSOLUTE MAXIMUM RATINGS(LIMITING VALUES)(TA=25)  
Symbols  
Value  
Units  
Zener current see table "Characteristics"  
Power dissipation at TA=25  
Junction temperature  
mW  
500  
175  
Ptot  
TJ  
-65 to +175  
Storage temperature range  
TSTG  
1)Valid provided that a distance of 8mm from case are kept at ambient temperature  
ELECTRCAL CHARACTERISTICS(TA=25)  
Symbols  
RthA  
Min  
Typ  
Max  
0.3  
Units  
K / mW  
V
Thermal resistance junction to ambient  
Forward voltage at IF=100mA  
VF  
1.0  
1) Valid provided that a distance at 8mm from case are kept at ambient temperature  

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