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GD75HCT170C2S PDF预览

GD75HCT170C2S

更新时间: 2024-11-19 17:01:19
品牌 Logo 应用领域
斯达半导体 - STARPOWER /
页数 文件大小 规格书
9页 277K
描述
C2.6.full bridge

GD75HCT170C2S 数据手册

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GD75HCT170C2S  
IGBT Module  
STARPOWER  
SEMICONDUCTOR  
IGBT  
GD75HCT170C2S  
1700V/75A 4 in one-package  
General Description  
STARPOWER IGBT Power Module provides ultra  
low conduction loss as well as short circuit ruggedness.  
They are designed for the applications such as general  
inverters and SVG.  
Features  
Low VCE(sat) Trench IGBT technology  
CE(sat) with positive temperature coefficient  
V
10μs short circuit capability  
Maximum junction temperature 175  
Low inductance case  
Fast & soft reverse recovery anti-parallel FWD  
Isolated copper baseplate using DBC technology  
Typical Applications  
Inverter for motor drive  
Uninterruptible power supply  
SVG  
Equivalent Circuit Schematic  
©2014 STARPOWER Semiconductor Ltd.  
6/4/2014  
1/9  
Rev.B  

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