Datasheet > GD650HFL170P1S

GD650HFL170P1S

更新时间： 2024-04-09 18:59:12

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GD650HFL170P1S 数据手册

GD650HFL170P1S

IGBT Module

STARPOWER

SEMICONDUCTOR

IGBT

GD650HFL170P1S

1700V/650A 2 in one-package

General Description

STARPOWER IGBT Power Module provides ultra

low conduction loss as well as short circuit ruggedness.

They are designed for the applications such as

wind and solar power.

Features



Low V_CE(sat)SPT+ IGBT technology

10μs short circuit capability

_CE(sat)with positive temperature coefficient

Maximum junction temperature 175^oC

Enlarged Diode for regenerative operation

Isolated copper baseplate using DBC technology

High power and thermal cycling capability

Typical Applications



High Power Converter

Wind and Solar Power

Traction Drive

Equivalent Circuit Schematic

1/8/2016

1/10

ZY0A

12 3 4 5 6 7...10

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