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GD600HTX65P4S PDF预览

GD600HTX65P4S

更新时间: 2024-04-09 19:02:49
品牌 Logo 应用领域
斯达半导体 - STARPOWER /
页数 文件大小 规格书
10页 298K
描述
P4.0-Tri-Pack

GD600HTX65P4S 数据手册

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GD600HTX65P4S  
IGBT Module  
STARPOWER  
SEMICONDUCTOR  
IGBT  
GD600HTX65P4S  
650V/600A 6 in one-package  
General Description  
STARPOWER IGBT Power Module provides ultra  
low conduction loss as well as short circuit ruggedness.  
They are designed for the applications such as  
hybrid and electric vehicles.  
Features  
Low VCE(sat) Trench IGBT technology  
Low switching losses  
V
CE(sat) with positive temperature coefficient  
Maximum junction temperature 175oC  
Low inductance case  
Fast & soft reverse recovery anti-parallel FWD  
Isolated copper pinfin baseplate using DBC technology  
Typical Applications  
Hybrid and electric vehicles  
Inverter for motor drive  
Uninterruptible power supply  
Equivalent Circuit Schematic  
©2018 STARPOWER Semiconductor Ltd.  
3/27/2018  
1/10  
Preliminary