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GD300MLT60B3S PDF预览

GD300MLT60B3S

更新时间: 2024-04-09 19:00:52
品牌 Logo 应用领域
斯达半导体 - STARPOWER /
页数 文件大小 规格书
11页 434K
描述
B3.2.3-level

GD300MLT60B3S 数据手册

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GD300MLT60B3S  
IGBT Module  
STARPOWER  
SEMICONDUCTOR  
IGBT  
GD300MLT60B3S  
Molding Type Module  
600V/300A 3-level in one-package  
General Description  
STARPOWER IGBT Power Module provides ultra  
low conduction loss as well as short circuit ruggedness.  
They are designed for the applications such as  
3-level-applications.  
Features  
Low VCE(sat) trench IGBT technology  
6μs short circuit capability  
VCE(sat) with positive temperature coefficient  
Maximum junction temperature 175  
Low inductance case  
Fast & soft reverse recovery anti-parallel FWD  
Isolated copper baseplate using DBC technology  
Typical Applications  
Solar power  
UPS  
3-level-applications  
©2013 STARPOWER Semiconductor Ltd.  
12/22/2013  
1/11  
Rev.B  

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