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GD300FFX65P3H PDF预览

GD300FFX65P3H

更新时间: 2024-09-25 17:01:47
品牌 Logo 应用领域
斯达半导体 - STARPOWER /
页数 文件大小 规格书
10页 266K
描述
P3.1-3 Phase Bridge with NTC

GD300FFX65P3H 数据手册

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GD300FFX65P3H  
IGBT Module  
STARPOWER  
SEMICONDUCTOR  
IGBT  
GD300FFX65P3H  
650V/300A 6 in one-package  
General Description  
STARPOWER IGBT Power Module provides ultra  
low conduction loss as well as short circuit ruggedness.  
They are designed for the applications such as  
hybrid and electric vehicles.  
Features  
Low VCE(sat) Trench IGBT technology  
6μs short circuit capability  
V
CE(sat) with positive temperature coefficient  
Maximum junction temperature 175oC  
Low inductance case  
Fast & soft reverse recovery anti-parallel FWD  
Isolated copper pinfin baseplate using DBC technology  
Typical Applications  
Automotive application  
Hybrid and electric vehicle  
Inverter for motor drive  
Equivalent Circuit Schematic  
©2017 STARPOWER Semiconductor Ltd.  
5/21/2017  
1/10  
Preliminary  

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