Datasheet > GD200TSS100L6S

GD200TSS100L6S

更新时间： 2025-07-18 18:29:03

品牌	Logo	应用领域
斯达半导体 - STARPOWER		/
页数	文件大小	规格书
11页	593K
描述
封装：L6; 额定电流：200A; 芯片类型：Trench-FS Gen1; 额定电压：1000V; 电路结构：BOOST/升压; 特征：平板基板

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GD200TSS100L6S 数据手册

GD200TSS100L6S

IGBT Module

STARPOWER

SEMICONDUCTOR

IGBT

GD200TSS100L6S

1000V/200A 3-level in one-package

General Description

STARPOWER IGBT Power Module provides ultra

low conduction loss as well as short circuit ruggedness.

They are designed for the applications such as

3-level-application.

Features



Low V_CE(sat)Trench IGBT technology

V_CE(sat)with positive temperature coefficient

Maximum junction temperature 175 ^oC

Fast & soft reverse recovery anti-parallel FWD

Isolated copper baseplate using DBC technology

Typical Applications



Solar power

3-level-application

UPS systems

Equivalent Circuit Schematic

2/16/2023

1/11

preliminary

12 3 4 5 6 7...11

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