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GD200SGT170C2S PDF预览

GD200SGT170C2S

更新时间: 2024-04-09 19:01:37
品牌 Logo 应用领域
斯达半导体 - STARPOWER /
页数 文件大小 规格书
9页 252K
描述
C2.1.Single

GD200SGT170C2S 数据手册

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GD200SGT170C2S  
IGBT Module  
STARPOWER  
SEMICONDUCTORTM  
IGBT  
GD200SGT170C2S  
Molding Type Module  
1700V/200A 1 in one-package  
General Description  
STARPOWER IGBT Power Module provides ultra  
low conduction loss as well as short circuit ruggedness.  
They are designed for the applications such as  
inverters and UPS.  
Features  
Low VCE(sat) Trench IGBT technology  
Low switching loss  
10μs short circuit capability  
Low inductance case  
V
CE(sat) with positive temperature coefficient  
Fast & soft reverse recovery anti-parallel FWD  
Isolated copper baseplate using DBC technology  
Equivalent Circuit Schematic  
Typical Applications  
AC inverter drives  
Switching mode power supplies  
UPS  
©2011 STARPOWER Semiconductor Ltd.  
9/27/2011  
1/9  
Rev.A  

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