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GD1200SGL330A4S PDF预览

GD1200SGL330A4S

更新时间: 2024-09-26 17:01:51
品牌 Logo 应用领域
斯达半导体 - STARPOWER /
页数 文件大小 规格书
9页 294K
描述
A4.0.Single

GD1200SGL330A4S 数据手册

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GD1200SGL330A4S  
IGBT Module  
STARPOWER  
SEMICONDUCTOR  
IGBT  
GD1200SGL330A4S  
3300V/1200A 1 in one-package  
General Description  
STARPOWER IGBT Power Module provides ultra  
low conduction loss as well as short circuit ruggedness.  
They are designed for the applications such as  
high power converters.  
Features  
Low VCE(sat) SPT IGBT technology  
Low switching losses  
10μs short circuit capability  
V
CE(sat) with positive temperature coefficient  
AlSiC baseplate for high power cycling capability  
AlN substrate for low thermal resistance  
High reliability package  
Typical Applications  
High Power Converter  
Wind Power  
Traction Drive  
Equivalent Circuit Schematic  
©2014 STARPOWER Semiconductor Ltd.  
3/10/2014  
1/9  
ZY0A  

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