Datasheet > GC20MPS12-247

GC20MPS12-247

更新时间： 2024-11-24 01:21:51

品牌	Logo	应用领域
GENESIC		/
页数	文件大小	规格书
7页	499K
描述
Silicon Carbide Schottky Diode

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

GC20MPS12-247 数据手册

GCꢀꢁMPSꢂꢀ-ꢀ47

ꢀꢁꢂꢂ V SiC MPS™ Diode

V_RRM

I_{F (Tc}

1200 V

44 A

Silicon Carbide Schottky Diode

135°C)

Q_C

79 nC

Features

Package

• High Avalanche (UIS) Capability

• Enhanced Surge Current Capability

• Superior Figure of Merit Q_C/I_F

• Low Thermal Resistance

• 175 °C Maximum Operating Temperature

• Temperature Independent Switching Behavior

• Positive Temperature Coefficient of V_F

TO-247-2L

•

Extremely Fast Switching Speeds

Advantages

Applications

• Low Standby Power Losses

• Improved Circuit Efficiency (Lower Overall Cost)

• Low Switching Losses

• Ease of Paralleling without Thermal Runaway

• Smaller Heat Sink Requirements

• Low Reverse Recovery Current

• Low Device Capacitance

• Boost Diode in Power Factor Correction (PFC)

• Switched Mode Power Supply (SMPS)

• Uninterruptible Power Supply (UPS)

• Motor Drives

• Freewheeling / Anti-parallel Diode in Inverters

• Solar Inverters

• Electric Vehicles (EV) & Charging Stations

•

Low Reverse Leakage Current

•

Induction Heating & Welding

Absolute Maximum Ratings (At T_C= 25 °C Unless Otherwise Stated)

Parameter

Symbol

Conditions

Values

1200

Unit

Repetitive Peak Reverse Voltage

V_RRM

T_C= 25 °C, D = 1

T_C= 135 °C, D = 1

Continuous Forward Current

I_F

T_C= 164 °C, D = 1

T_C= 25 °C, t_P= 10 ms

T_C= 150 °C, t_P= 10 ms

T_C= 25 °C, t_P= 10 ms

T_C= 150 °C, t_P= 10 ms

120

Non-Repetitive Peak Forward Surge

Current, Half Sine Wave

I_F,SM

Repetitive Peak Forward Surge Current,

Half Sine Wave

I_F,RM

Non-Repetitive Peak Forward Surge

Current

I_F,max

T_C= 25 °C, t_P= 10 µs

1100

i²t Value

∫i²dt

E_AS

T_C= 25 °C, t_P= 10 ms

L = 1.1 mH, I_AS= 20 A

V_R= 0 ~ 960 V

220

A²s

V/ns

Non-Repetitive Avalanche Energy

Diode Ruggedness

dV/dt

P_tot

100

Power Dissipation

T_C= 25 °C

549

Operating and Storage Temperature

T_j, T_stg

-55 to 175

°C

Aug 2018 Rev1.2

www.genesicsemi.com/schottky_mps/GC20MPS12-247.pdf

Page 1 of 7

12 3 4 5 6 7

中文翻译

下载PDF

与GC20MPS12-247相关器件

型号	品牌	获取价格	描述	数据表
GC20MPS12-247_18	GENESIC	获取价格	Silicon Carbide Schottky Diode
GC2120001	DIODES	获取价格	Parallel - Fundamental Quartz Crystal, 21.2MHz Nom, SMD, 2 PIN
GC217	ETC	获取价格	AUDIO
GC217A	ETC	获取价格	AUDIO
GC21PC25	ETC	获取价格	Microcontroller
GC21PI25	ETC	获取价格	Microcontroller
GC220	MEANWELL	获取价格	220W Single Output Battery Charger
GC220_11	MEANWELL	获取价格	220W Single Output Battery Charger
GC220A12	MEANWELL	获取价格	220W Single Output Battery Charger
GC220A12-AD1	MEANWELL	获取价格	220W Single Output Battery Charger