Datasheet > GC20MPS12-220

GC20MPS12-220

更新时间： 2024-10-16 01:22:31

品牌	Logo	应用领域
GENESIC		/
页数	文件大小	规格书
7页	305K
描述
Silicon Carbide Schottky Diode

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GC20MPS12-220 数据手册

GC20MPS12-220

1200V 20A SiC Schottky MPS™ Diode

V_RRM

I_{F (Tc}

1200 V

27 A

Silicon Carbide Schottky Diode

135°C)

Q_C

47 nC

Features

Package

Case

• High Avalanche (UIS) Capability

• Enhanced Surge Current Capability

• Superior Figure of Merit Q_C/I_F

Case

• Low Thermal Resistance

• 175 °C Maximum Operating Temperature

• Temperature Independent Switching Behavior

• Positive Temperature Coefficient of V_F

• Extremely Fast Switching Speeds

TO-220-2

Advantages

Applications

• Low Standby Power Losses

• Improved Circuit Efficiency (Lower Overall Cost)

• Low Switching Losses

• Boost Diode in Power Factor Correction (PFC)

• Switched Mode Power Supply (SMPS)

• Uninterruptible Power Supply (UPS)

• Motor Drives

• Freewheeling / Anti-parallel Diode in Inverters

• Solar Inverters & Wind Energy Converters

• Electric Vehicles (EV) & DC Fast Charging

• Induction Heating & Welding

• Ease of Paralleling without Thermal Runaway

• Smaller Heat Sink Requirements

• Low Reverse Recovery Current

• Low Device Capacitance

• Low Reverse Leakage Current

Absolute Maximum Ratings (At T_C= 25 °C Unless Otherwise Stated)

Parameter

Symbol

Conditions

Values

1200

Unit

Repetitive Peak Reverse Voltage

V_RRM

T_C= 25 °C, D = 1

T_C= 135 °C, D = 1

Continuous Forward Current

I_F

T_C= 150 °C, D = 1

T_C= 25 °C, t_P= 10 ms

T_C= 150 °C, t_P= 10 ms

T_C= 25 °C, t_P= 10 ms

T_C= 150 °C, t_P= 10 ms

160

128

Non-Repetitive Peak Forward Surge

Current, Half Sine Wave

I_F,SM

Repetitive Peak Forward Surge Current,

Half Sine Wave

I_F,RM

Non-Repetitive Peak Forward Surge

Current

i²t Value

I_F,max

T_C= 25 °C, t_P= 10 µs

800

∫i²dt

E_AS

T_C= 25 °C, t_P= 10 ms

L = 1.3 mH, I_AS= 20 A

V_R= 0 ~ 960 V

128

245

A²s

V/ns

Non-Repetitive Avalanche Energy

Diode Ruggedness

dV/dt

P_tot

200

Power Dissipation

T_C= 25 °C

242

Operating and Storage Temperature

T_j, T_stg

-55 to 175

°C

April 2019 Rev1.3

www.genesicsemi.com/schottky_mps/GC20MPS12-220.pdf

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