Datasheet > GC1302-150B

GC1302-150B

更新时间： 2024-09-25 20:39:15

品牌	Logo	应用领域
美高森美 - MICROSEMI		光电二极管变容二极管
页数	文件大小	规格书
3页	151K
描述
Variable Capacitance Diode, C Band, 1.2pF C(T), Silicon, Abrupt, ROHS COMPLIANT, PLASTIC, CASE 150B, 2 PIN

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

GC1302-150B 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	包装说明：	R-PDSO-N2
针数：	2	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8541.10.00.80
风险等级：	5.62	其他特性：	LOW NOISE
配置：	SINGLE	二极管电容容差：	10%
最小二极管电容比：	1.7	标称二极管电容：	1.2 pF
二极管元件材料：	SILICON	二极管类型：	VARIABLE CAPACITANCE DIODE
频带：	C BAND	JESD-30 代码：	R-PDSO-N2
JESD-609代码：	e4	元件数量：	1
端子数量：	2	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED	认证状态：	Not Qualified
最小质量因数：	3700	最大重复峰值反向电压：	30 V
子类别：	Varactors	表面贴装：	YES
端子面层：	GOLD	端子形式：	NO LEAD
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
变容二极管分类：	ABRUPT	Base Number Matches：	1

GC1302-150B 数据手册

KV1913A – GC1310

ENHANCED PERFORMANCE SURFACE MOUNT

EPSM™Hyperabrupt Varactor Diodes

RoHS Compliant

DESCRIPTION

KEY FEATURES

. Wide Range of Capacitance

Values

Our EPSM packaged devices are designed for the most demanding

commercial and Military requirements where the inconsistent

performance inherent in plastic surface mount packages cannot be

tolerated. These package styles extend the surface mount

construction format to 6 GHz for high performance wireless

applications. Select varactors from three families of C/V curves for

designs through 6 GHz. They are available in multiple chip

configuration as well as outlines which directly replace SOT23 and

SOD323 devices. Other devices and values are always available.

Contact our applications engineering department for more details.

. For Frequencies from VHF to 6

GHz

. Lower Parasitics

. Superior Consistency/Repeatability

. Footprints Available for SOT23/

SOD323/SOD123

. Dozens of Configurations Available

. Mil Grade Ceramic/Epoxy

Amalgam

. Tape & Reel Available for Pick and

Place Assembly

. RoHS Compliant¹

APPLICATIONS

Specify EPSM package style 450A or 454. For 3 terminal style 454,

refer to configuration page. Example: GC1503-454-4 is a common

cathode pair of abrupt junction varactors with 1.5 pF capacitance

@4V (per device); for the 2 terminal style 450A, refer to the outline

dimension table. Example: GC1503-450A is a single abrupt junction

varactor with 1.5 pF capacitance at 4V in an 0604 footprint.

APPLICATIONS/BENEFITS

. High Performance Wireless

Surface Mount Options for

GSM, TAGS, WANS, PCS

. Wideband VCO applications

. Voltage Tuned Filters

. VCXOs

ABSOLUTE MAXIMUM RATINGS AT 25º C

(UNLESS OTHERWISE SPECIFIED)

Rating

Symbol

Value

Unit

Maximum Leakage Current

@80% of Minimum Rated V_B

I_R

ºC

Storage Temperature

Operating Temperature

T_STG

T_OP

-55 to +125

IMPORTANT: For the most current data, consult our website: www.MICROSEMI.com

Specifications are subject to change. Consult factory for the latest information.

¹The EPSM products are supplied with a

RoHS complaint Gold finish

These devices are ESD sensitive and must be handled using ESD precautions.

Microsemi

Page 1

Rev: 2009-01-19

Microwave Products

75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748

12 3

中文翻译

下载PDF

与GC1302-150B相关器件

型号	品牌	获取价格	描述	数据表
GC1302-150D	MICROSEMI	获取价格	Variable Capacitance Diode, C Band, 1.2pF C(T), Silicon, Abrupt, ROHS COMPLIANT, PLASTIC,
GC1302-150E	MICROSEMI	获取价格	Variable Capacitance Diode, C Band, 1.2pF C(T), Silicon, Abrupt, ROHS COMPLIANT, PLASTIC,
GC1302-150X	MICROSEMI	获取价格	Variable Capacitance Diode, C Band, 1.2pF C(T), Silicon, Hyperabrupt, ROHS COMPLIANT, PLAS
GC1302-154	MICROSEMI	获取价格	Variable Capacitance Diode, C Band, 1.2pF C(T), Silicon, Hyperabrupt, ROHS COMPLIANT, PLAS
GC1302-154-4	MICROSEMI	获取价格	Variable Capacitance Diode, C Band, 1.2pF C(T), Silicon, Abrupt
GC1302-450B	MICROSEMI	获取价格	Variable Capacitance Diode, C Band, 1.2pF C(T), Silicon, Abrupt, ROHS COMPLIANT, PLASTIC,
GC1302-450X	MICROSEMI	获取价格	Variable Capacitance Diode, C Band, 1.2pF C(T), Silicon, Hyperabrupt, ROHS COMPLIANT, PLAS
GC1302-454-4	MICROSEMI	获取价格	Variable Capacitance Diode, C Band, 1.2pF C(T), Silicon, Abrupt, ROHS COMPLIANT, PLASTIC,
GC1303	MICROSEMI	获取价格	ENHANCED PERFORMANCE SURFACE MOUNT EPSM PACKAGED DEVICES
GC1303-150A	MICROSEMI	获取价格	Variable Capacitance Diode, C Band, 1.5pF C(T), Silicon, Abrupt, ROHS COMPLIANT, PLASTIC,

与GC1302-150B相关文章

塔塔电子与力积电达成技术转让协议，携手建设印度首座晶圆厂
2024-09-29

6
英特尔震撼发布：128核心256线程的至强6性能核处理器
2024-09-29

8
SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

11
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

17

产品中心

服务支持

精选活动

关于我们

帮助中心

GC1302-150B

GC1302-150B 技术参数

GC1302-150B 数据手册

与GC1302-150B相关器件

与GC1302-150B相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

GC1302-150B

GC1302-150B 技术参数

GC1302-150B 数据手册

与GC1302-150B相关器件

与GC1302-150B相关文章

您还可以找

您在本页遇到什么问题？