Datasheet > GC08MPS12-220_V01

GC08MPS12-220_V01

更新时间： 2024-11-27 01:22:31

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GENESIC		/
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7页	341K
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Silicon Carbide Schottky Diode

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GC08MPS12-220_V01 数据手册

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GC08MPS12-220

1200V 8A SiC Schottky MPS™ Diode

V_RRM

I_{F (Tc}

1200 V

13 A

Silicon Carbide Schottky Diode

135°C)

Q_C

19 nC

Features

Package

Case

• High Avalanche (UIS) Capability

• Enhanced Surge Current Capability

• Superior Figure of Merit Q_C/I_F

Case

• Low Thermal Resistance

• 175 °C Maximum Operating Temperature

• Temperature Independent Switching Behavior

• Positive Temperature Coefficient of V_F

• Extremely Fast Switching Speeds

TO-220-2

Advantages

Applications

• Low Standby Power Losses

• Improved Circuit Efficiency (Lower Overall Cost)

• Low Switching Losses

• Boost Diode in Power Factor Correction (PFC)

• Switched Mode Power Supply (SMPS)

• Uninterruptible Power Supply (UPS)

• Motor Drives

• Freewheeling / Anti-parallel Diode in Inverters

• Solar Inverters & Wind Energy Converters

• Electric Vehicles (EV) & DC Fast Charging

• Induction Heating & Welding

• Ease of Paralleling without Thermal Runaway

• Smaller Heat Sink Requirements

• Low Reverse Recovery Current

• Low Device Capacitance

• Low Reverse Leakage Current

Absolute Maximum Ratings (At T_C= 25 °C Unless Otherwise Stated)

Parameter

Symbol

Conditions

Values

1200

Unit

Repetitive Peak Reverse Voltage

V_RRM

T_C= 25 °C, D = 1

T_C= 135 °C, D = 1

Continuous Forward Current

I_F

T_C= 155 °C, D = 1

T_C= 25 °C, t_P= 10 ms

T_C= 150 °C, t_P= 10 ms

T_C= 25 °C, t_P= 10 ms

T_C= 150 °C, t_P= 10 ms

Non-Repetitive Peak Forward Surge

Current, Half Sine Wave

I_F,SM

Repetitive Peak Forward Surge Current,

Half Sine Wave

I_F,RM

Non-Repetitive Peak Forward Surge

Current

i²t Value

I_F,max

T_C= 25 °C, t_P= 10 µs

320

∫i²dt

E_AS

T_C= 25 °C, t_P= 10 ms

L = 3.3 mH, I_AS= 8 A

V_R= 0 ~ 960 V

105

A²s

V/ns

Non-Repetitive Avalanche Energy

Diode Ruggedness

dV/dt

P_tot

200

Power Dissipation

T_C= 25 °C

126

Operating and Storage Temperature

T_j, T_stg

-55 to 175

°C

April 2019 Rev1.3

www.genesicsemi.com/schottky_mps/GC08MPS12-220.pdf

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