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GBU8D PDF预览

GBU8D

更新时间: 2024-02-19 08:29:02
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical /
页数 文件大小 规格书
2页 104K
描述
SILICON BRIDGE RECTIFIERS

GBU8D 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active包装说明:R-PSFM-T4
针数:4Reach Compliance Code:compliant
HTS代码:8541.10.00.80风险等级:1.19
Is Samacsys:N其他特性:UL RECOGNIZED
配置:BRIDGE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODE最大正向电压 (VF):1 V
JESD-30 代码:R-PSFM-T4湿度敏感等级:1
最大非重复峰值正向电流:300 A元件数量:4
相数:1端子数量:4
最高工作温度:150 °C最大输出电流:5.6 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:1000 V
子类别:Bridge Rectifier Diodes表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

GBU8D 数据手册

 浏览型号GBU8D的Datasheet PDF文件第2页 
GALAXY ELECTRICAL  
GBU8A---GBU8M  
BL  
VOLTAGE RANGE: 50 --- 1000 V  
SILICON BRIDGE RECTIFIERS  
CURRENT: 8.0A  
FEATURES  
Rating to 1000V PRV  
GBU  
.933(23.7)  
.894(22.7)  
.140(3.56)  
.130(3.30)  
Surge overload rating to 200 Amperes peak  
Ideal for printed circuit board  
.185(4.7)  
.165(4.2)  
.160(4.1)  
.140(3.5)  
0
45  
Reliable low cost construction utilizing molded  
plastic technique results in inexpensive product  
Lead solderable per MIL-STD-202 method 208  
Glass passivated junctions  
.085(2.16)  
.065(1.65)  
.740(18.8)  
.720(18.3)  
+
+
.075(1.9)R.TYP.  
_
~
~
+
.080(2.03)  
.060(1.52)  
.710(18)  
.690(17.5)  
.100(2.54)  
.085(2.16)  
.050(1.27)  
.040(1.02)  
.085(2.18)  
.075(1.90)  
.190(4.83)  
.210(5.33)  
.022(.56)  
.018(.46)  
inch(mm)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 ambient temperature unless otherwise specified.  
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.  
GBU GBU  
GBU GBU GBU GBU GBU  
UNITS  
8A  
8B  
8D  
8G  
8J  
8K  
8M  
V
V
V
Maximum recurrent peak reverse voltage  
Maximum RMS voltage  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
VRRM  
VRMS  
VDC  
Maximum DC blocking voltage  
Maximum average forw ard  
100  
1000  
A
8.0  
IF(AV)  
output current  
@TC=100  
Peak forw ard surge current  
8.3ms single half-sine-w ave  
superimposed on rated load  
A
V
IFSM  
200.0  
1.0  
Maximum instantaneous forw ard voltage  
@ 4.0 A  
VF  
IR  
A
μ
Maximum reverse current  
@TA=25  
5.0  
0.5  
mA  
at rated DC blocking voltage @TA=125  
Operating junction temperature range  
Storage temperature range  
- 55 ---- + 150  
- 55 ---- + 150  
TJ  
TSTG  
www.galaxycn.com  
BLGALAXY ELECTRICAL  
1.  
Document Number 0287027  

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