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GBU8A_04 PDF预览

GBU8A_04

更新时间: 2024-09-16 04:19:31
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飞兆/仙童 - FAIRCHILD /
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3页 47K
描述
Bridge Rectifiers

GBU8A_04 数据手册

 浏览型号GBU8A_04的Datasheet PDF文件第2页浏览型号GBU8A_04的Datasheet PDF文件第3页 
GBU8A - GBU8M  
Bridge Rectifiers  
Features  
Glass passivated junction  
Surge overload rating: 200 amperes peak  
Reliable low cost construction utilizing molded plastic technique.  
Ideal for printed circuit board.  
+
~
~
-
GBU  
Absolute Maximum Ratings *  
T
= 25°C unless otherwise noted  
a
Value  
Symbol  
Parameter  
Units  
8A  
50  
8B  
100  
70  
8D  
200  
140  
200  
8G  
400  
280  
400  
8J  
600  
420  
600  
8K  
800  
560  
800  
8M  
1000  
700  
V
Maximum Repetitive Reverse Voltage  
Maximum RMS Bridge Input Voltage  
V
V
V
RRM  
RMS  
R
V
V
35  
DC Reverse Voltage (Rated V )  
50  
100  
1000  
R
I
Average Recitified Forward Current, @ T = 100°C  
8.0  
6.0  
A
A
F(AV)  
A
@ T = 45°C  
A
I
Non-Repetitive Peak Forward Surge Current  
FSM  
200  
A
8.3ms Single Half-Sine-Wave  
T
T
Storage Temperature Range  
-55 to +150  
-55 to +150  
°C  
°C  
STG  
J
Operating Junction Temperature  
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.  
Thermal Characteristics  
Symbol  
Parameter  
Value  
Units  
P
Power Dissipation  
16  
18  
3
W
D
R
R
Thermal Resistance, Junction to Ambient, * per leg  
Thermal Resistance, Junction to Case, * per leg  
°C/W  
°C/W  
θJA  
θJC  
* Device mounted on PCB with 0.5 × 0.5” (12 × 12mm).  
Electrical Characteristics  
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
Forward Voltage, per element @ 8.0A  
Reverse Current, per element @ Rated V  
Value  
Units  
V
1.0  
V
F
I
R
R
T
= 25°C  
= 100°C  
50  
500  
µA  
µA  
A
T
A
2
2
I t Rating for Fusing  
t < 8.35ms  
166  
A s  
©2004 Fairchild Semiconductor Corporation  
GBU8A - GBU8M Rev. 1.4.0  
1
www.fairchildsemi.com  

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