5秒后页面跳转
GBU4K-E3 PDF预览

GBU4K-E3

更新时间: 2024-09-23 21:04:43
品牌 Logo 应用领域
威世 - VISHAY 局域网二极管
页数 文件大小 规格书
4页 332K
描述
DIODE 3 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE, LEAD FREE, PLASTIC, CASE GBU, 4 PIN, Bridge Rectifier Diode

GBU4K-E3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:R-PSFM-T4
针数:4Reach Compliance Code:unknown
HTS代码:8541.10.00.80风险等级:5
其他特性:UL RECOGNIZED最小击穿电压:800 V
外壳连接:ISOLATED配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
最大正向电压 (VF):1 VJESD-30 代码:R-PSFM-T4
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:150 A元件数量:4
相数:1端子数量:4
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:3 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT APPLICABLE认证状态:Not Qualified
最大重复峰值反向电压:800 V子类别:Bridge Rectifier Diodes
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT APPLICABLEBase Number Matches:1

GBU4K-E3 数据手册

 浏览型号GBU4K-E3的Datasheet PDF文件第2页浏览型号GBU4K-E3的Datasheet PDF文件第3页浏览型号GBU4K-E3的Datasheet PDF文件第4页 
GBU4A thru GBU4M  
Vishay General Semiconductor  
Glass Passivated Single-Phase Bridge Rectifier  
Major Ratings and Characteristics  
Case Style GBU  
IF(AV)  
VRRM  
IFSM  
IR  
4 A  
50 V to 1000 V  
150 A  
5 µA  
VF  
1.0 V  
Tj max.  
150 °C  
Features  
Mechanical Data  
• UL Recognition file number E54214  
• Ideal for printed circuit boards  
• High surge current capability  
Case: GBU  
Epoxy meets UL-94V-0 Flammability rating  
Terminals: Matte tin plated (E3 Suffix) leads, solder-  
able per J-STD-002B and JESD22-B102D  
• High case dielectric strength of 1500 V  
• Solder Dip 260 °C, 40 seconds  
RMS  
Polarity: As marked on body  
Mounting Torque: 10 cm-kg (8.8 inches-lbs) max.  
Recommended Torque: 5.7 cm-kg (5 inches-lbs)  
Typical Applications  
General purpose use in ac-to-dc bridge full wave rec-  
tification for Monitor, TV, Printer, Switching Mode  
Power Supply, Adapter, Audio equipment, and Home  
Appliances applications.  
Maximum Ratings  
TA = 25 °C, unless otherwise specified  
Parameter  
Maximum repetitive peak  
Symbols GBU4A GBU4B GBU4D GBU4G GBU4J GBU4K GBU4M Units  
VRRM  
50  
100  
200  
400  
600  
800  
1000  
V
reverse voltage  
Maximum RMS voltage  
VRMS  
VDC  
35  
50  
70  
140  
200  
280  
400  
4.0  
420  
600  
560  
800  
700  
V
V
A
Maximum DC blocking voltage  
100  
1000  
TC =100°C(1)  
TA = 40 °C(2)  
Maximum average forward  
rectified output current at  
IF(AV)  
3.0  
Peak forward surge current  
single sine-wave superimposed  
on rated load  
IFSM  
150  
A
I2t  
A2sec  
°C  
Rating for fusing (t < 8.3 ms)  
93  
Operating junction and storage  
temperature range  
TJ,TSTG  
- 55 to + 150  
Note:  
(1) Unit case mounted on 1.6 x 1.6 x 0.06" thick (4.0 x 4.0 x 0.15 cm) Al. Plate  
(2) Units mounted on P.C.B. with 0.5 x 0.5" (12 x 12 mm) copper pads and 0.375" (9.5 mm) lead length  
Document Number 88614  
29-Jul-05  
www.vishay.com  
1

与GBU4K-E3相关器件

型号 品牌 获取价格 描述 数据表
GBU4K-E3/1 VISHAY

获取价格

DIODE 3 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE GBU, 4 PIN, Bridge Rectif
GBU4K-E3/45 VISHAY

获取价格

Diode Rectifier Bridge Single 800V 4A 4-Pin Case GBU Tube
GBU4K-E3/51 VISHAY

获取价格

Diode Rectifier Bridge Single 800V 4A 4-Pin Case GBU Bulk
GBU4K-E3/72 VISHAY

获取价格

Bridge Rectifier Diode, 4A, 800V V(RRM),
GBU4KE3-E3 VISHAY

获取价格

DIODE 3 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE GBU, 4 PIN, Bridge Rectif
GBU4KL MCC

获取价格

GBU4M MCC

获取价格

4 Amp Single Phase Glass Passivated Bridge Rectifier 50 to 1000 Volts
GBU4M DIOTEC

获取价格

Silicon-Bridge Rectifiers
GBU4M SECOS

获取价格

4.0 A MP Glass Passivated Bridge Rectifiers
GBU4M CHENG-YI

获取价格

SILICON BRIDGE RECTIFIERS GLASS PASSIVATED BRIDGE RECTIFIERS