GBU402-G

更新时间： 2024-01-11 16:24:57

品牌	Logo	应用领域
上华 - COMCHIP		整流二极管桥式整流二极管
页数	文件大小	规格书
3页	80K
描述
Glass Passivated Bridge Rectifiers

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技术参数
数据手册

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GBU402-G 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.80	风险等级：	5.76
Is Samacsys：	N	配置：	BRIDGE, 4 ELEMENTS
二极管类型：	BRIDGE RECTIFIER DIODE	最大正向电压 (VF)：	1.1 V
最大非重复峰值正向电流：	150 A	元件数量：	4
最高工作温度：	150 °C	最大输出电流：	4 A
峰值回流温度（摄氏度）：	NOT SPECIFIED	最大重复峰值反向电压：	200 V
子类别：	Bridge Rectifier Diodes	表面贴装：	NO
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

GBU402-G 数据手册

Glass Passivated Bridge Rectifiers

GBU4005-G Thru. GBU410-G

Reverse Voltage: 50 to 1000V

Forward Current: 4.0A

RoHS Device

GBU

Features

-Surge overload rating - 150 amperes peak.

0.437(11.1)

0.430(10.9)

0.139(3.53)

0.133(3.37)

-Ideal for printed circuit board.

0.874(22.2)

0.860(21.8)

0.126(3.2)*45°

Chamfer

0.161(4.1)

0.134(3.4)

0.232(5.90)

0.213(5.40)

0.752(19.1)

0.720(18.3)

Mechanical Data

0.401(10.2)

0.073(1.85)

0.057(1.45)

0.392(9.80)

-Epoxy: U/L 94-V0 rate flame retardant.

0.100(2.54)

0.085(2.16)

-Case: Molded plastic, GBU

0.720(18.29)

0.106(2.7)

0.091(2.3)

0.680(17.27)

0.080(2.03)

0.065(1.65)

0.047(1.2)

0.035(0.9)

-Mounting position: Any

-Weight: 3.91 grams

0.022(0.56)

0.018(0.46)

0.210(5.3)

0.190(4.8)

0.210(5.3)

0.190(4.8)

0.210(5.3)

0.190(4.8)

Dimensions in inches and (millimeter)

Maximum ratings and electrical characteristics

Rating at 25°C ambient temperature unless otherwise specified.

Single phase, half wave ,60Hz, resistive or inductive load.

For capacitive load, derate current by 20%

GBU

Symbol

Parameter

Unit

4005-G

401-G

402-G

404-G

406-G

408-G

410-G

1000

700

Maximum Reverse Peak Repetitive Voltage

RRM

RMS

100

200

140

200

400

280

400

600

420

600

800

560

800

Maximum RMS Bridge Input Voltage

Maximum DC Blocking Voltage

VDC

100

1000

4.0

2.4

Maximum Average Forward (With heatsink Note2)

Rectified Current @Tc=100°C (without hestsink)

(AV)

Peak Forward Surage Current ,

8.3ms Single Half Sine-Wave

Super Imposed On Rated Load

IFSM

150

Maximum Forward Voltage Drop

Per Bridge Element at 4.0A Peak

1.1

@TJ=25°C

@TJ=125°C

10.0

500

Maximum Reverse Current

At Rate DC Blocking Voltage

μA

I²T Rating for Fusing(t<8.3ms)

A²s

I²t

Typical Junction Capacitandce Per Element

(Note 1)

Typical Thermal Resistance

RθJC

2.2

°C/W

°C

Operating Temperature Range

-55 to +150

Storage Temperature Range

Notes:

TSTG

°C

1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

2. Device mounted on 50mm*50mm*1.6mm Cu plate heatsink.

REV:A

Page 1

QW-BBR61

Comchip Technology CO., LTD.

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