Datasheet > GBU401-G

GBU401-G

更新时间： 2024-01-11 09:07:10

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上华 - COMCHIP		/
页数	文件大小	规格书
3页	80K
描述
Glass Passivated Bridge Rectifiers

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GBU401-G 数据手册

Glass Passivated Bridge Rectifiers

GBU4005-G Thru. GBU410-G

Reverse Voltage: 50 to 1000V

Forward Current: 4.0A

RoHS Device

GBU

Features

-Surge overload rating - 150 amperes peak.

0.437(11.1)

0.430(10.9)

0.139(3.53)

0.133(3.37)

-Ideal for printed circuit board.

0.874(22.2)

0.860(21.8)

0.126(3.2)*45°

Chamfer

0.161(4.1)

0.134(3.4)

0.232(5.90)

0.213(5.40)

0.752(19.1)

0.720(18.3)

Mechanical Data

0.401(10.2)

0.073(1.85)

0.057(1.45)

0.392(9.80)

-Epoxy: U/L 94-V0 rate flame retardant.

0.100(2.54)

0.085(2.16)

-Case: Molded plastic, GBU

0.720(18.29)

0.106(2.7)

0.091(2.3)

0.680(17.27)

0.080(2.03)

0.065(1.65)

0.047(1.2)

0.035(0.9)

-Mounting position: Any

-Weight: 3.91 grams

0.022(0.56)

0.018(0.46)

0.210(5.3)

0.190(4.8)

0.210(5.3)

0.190(4.8)

0.210(5.3)

0.190(4.8)

Dimensions in inches and (millimeter)

Maximum ratings and electrical characteristics

Rating at 25°C ambient temperature unless otherwise specified.

Single phase, half wave ,60Hz, resistive or inductive load.

For capacitive load, derate current by 20%

GBU

Symbol

Parameter

Unit

4005-G

401-G

402-G

404-G

406-G

408-G

410-G

1000

700

Maximum Reverse Peak Repetitive Voltage

RRM

RMS

100

200

140

200

400

280

400

600

420

600

800

560

800

Maximum RMS Bridge Input Voltage

Maximum DC Blocking Voltage

VDC

100

1000

4.0

2.4

Maximum Average Forward (With heatsink Note2)

Rectified Current @Tc=100°C (without hestsink)

(AV)

Peak Forward Surage Current ,

8.3ms Single Half Sine-Wave

Super Imposed On Rated Load

IFSM

150

Maximum Forward Voltage Drop

Per Bridge Element at 4.0A Peak

1.1

@TJ=25°C

@TJ=125°C

10.0

500

Maximum Reverse Current

At Rate DC Blocking Voltage

μA

I²T Rating for Fusing(t<8.3ms)

A²s

I²t

Typical Junction Capacitandce Per Element

(Note 1)

Typical Thermal Resistance

RθJC

2.2

°C/W

°C

Operating Temperature Range

-55 to +150

Storage Temperature Range

Notes:

TSTG

°C

1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

2. Device mounted on 50mm*50mm*1.6mm Cu plate heatsink.

REV:A

Page 1

QW-BBR61

Comchip Technology CO., LTD.

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