GBU3504 PDF预览

GBU3504

更新时间: 2025-07-20 02:55:27
品牌 Logo 应用领域
虹扬 - HY /
页数 文件大小 规格书
3页 431K
描述
Glass Passivated Bridge Rectifiers

GBU3504 数据手册

 浏览型号GBU3504的Datasheet PDF文件第2页浏览型号GBU3504的Datasheet PDF文件第3页 
www.hygroup.com.tw  
GBU35005 THRU GBU3510  
Reverse Voltage - 50 to 1000 Volts  
Forward Current - 35 Amperes  
Glass Passivated Bridge Rectifiers  
Features  
Glass passivated chip  
GBU  
Low forward voltage drop  
Ideal for printed circuit board  
High surge current capability  
RoHS  
COMPLIANT  
Meet UL flammability classification 94V-0  
Mechanical Data  
Polarity: Symbol marked on body  
Mounting position: Any  
Note: Products with logo  
or  
are made by HY Electronic (Cayman) Limited.  
Applications  
General purpose use in AC/DC bridge full wave rectification,  
for SMPS, lighting ballaster, adapter, etc.  
Dimensions in inches and (milimeters)  
Maximum Ratings and Electrical Characteristics  
Rating at 25ambient temperature unless otherwise specified.  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
GBU  
35005  
50  
GBU  
3501  
100  
70  
GBU  
3502  
200  
GBU  
3504  
400  
280  
400  
35.0  
4.2  
GBU  
3506  
600  
GBU  
3508  
800  
GBU  
3510  
1000  
700  
Characteristics  
Symbol  
Unit  
V
Maximum Repetitive Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
35  
140  
420  
560  
V
V
Maximum DC Blocking Voltage  
50  
100  
200  
600  
800  
1000  
Maximum Average Forward (with heatsink Note 2)  
Rectified Current @ TC=100(without heatsink)  
Peak Forward Surge Current, 8.3mS Single Half Sine-Wave,  
Superimposed on Rated Load (JEDEC Method)  
I(AV)  
A
A
IFSM  
350  
I2t Rating for Fusing (t<8.3mS)  
I2t  
A2s  
V
508  
1.1  
Peak Forward Voltage per Diode at 17.5A DC  
Maximum DC Reverse Current at Rated @TJ=25℃  
DC Blocking Voltage per Diode @TJ=125℃  
Typical Junction Capacitance per Diode (Note1)  
Typical Thermal Resistance to case (Note2)  
Operating Junction Temperature Range  
Storage Temperature Range  
VF  
5.0  
IR  
μA  
500  
70  
CJ  
RθJC  
TJ  
pF  
/W  
2.2  
-55 to +150  
-55 to +150  
TSTG  
Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.  
2.Device mounted on 100mm*100mm*1.6mm Cu plate heatsink.  
3.The typical data above is for reference only  
GBU35*-U-00/99-00/01  
Rev. 11, 18-May-2020  

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