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GBU2508-BP PDF预览

GBU2508-BP

更新时间: 2024-01-23 19:02:12
品牌 Logo 应用领域
美微科 - MCC 局域网二极管
页数 文件大小 规格书
3页 364K
描述
Bridge Rectifier Diode,

GBU2508-BP 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:not_compliant风险等级:1.67
最小击穿电压:800 V配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
JESD-30 代码:R-PSFM-T4湿度敏感等级:1
最大非重复峰值正向电流:300 A元件数量:4
相数:1端子数量:4
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:25 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED最大重复峰值反向电压:800 V
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

GBU2508-BP 数据手册

 浏览型号GBU2508-BP的Datasheet PDF文件第2页浏览型号GBU2508-BP的Datasheet PDF文件第3页 
M C C  
R
GBU25005  
THRU  
Micro Commercial Components  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
GBU2510  
Features  
xꢀ High Surge Forward current capability  
25 Amp Single Phase  
Glass Passivated  
Bridge Rectifiers  
50 to 1000 Volts  
xꢀ Glass Passivated Chip junction  
·
Epoxy meets UL 94 V-0 flammability rating  
Moisture Sensitivity Level 1  
Lead Free Finish/Rohs Compliant (Note1) ("P"Suffix designates  
Compliant. See ordering information)  
Halogen free available upon request by adding suffix "-HF"  
Maximum Ratings  
GBU  
xꢀ Operating Temperature: -55к to +150к  
xꢀ Storage Temperature: -55к to +150к  
xꢀ Max Thermal Resistance:1.0к/W Junction to Case(Heatsink)  
Mounting Torgue: 5.0 in-lbs Maximum  
Maximum  
Recurrent  
Maximum DC  
Blocking  
Voltage  
MCC  
Maximum  
Part Number Peak Reverse RMS Voltage  
Voltage  
Case Style  
3.2x45  
A
GBU25005  
GBU2501  
GBU2502  
GBU2504  
GBU2506  
GBU2508  
GBU2510  
50V  
100V  
200V  
400V  
600V  
800V  
1000V  
35V  
70V  
50V  
100V  
200V  
400V  
600V  
800V  
1000V  
C
N
N
N
I
G
K
H
140V  
280V  
420V  
560V  
700V  
B
J
1.90 RADIUS  
N
-
+
~
~
D
L
Electrical Characteristics @ 25к Unless Otherwise Specified  
Maximum Average  
E
M
F
DIMENSIONS  
Forward Current  
(with heatsink)  
TC = 98к  
IF(AV)  
IFSM  
25 A  
INCHES  
MM  
DIM  
A
B
C
D
E
F
G
H
I
J
MIN  
.860  
.720  
.130  
.690  
.030  
.018  
.290  
.140  
.065  
.060  
.077  
.040  
.190  
MAX  
MIN  
21.80  
18.30  
3.30  
17.50  
0.76  
0.46  
7.40  
3.50  
1.65  
1.52  
1.95  
1.02  
4.83  
MAX  
22.30  
18.80  
3.60  
18.20  
1.00  
0.60  
7.90  
4.10  
2.16  
2.45  
2.50  
1.27  
5.33  
NOTE  
.880  
.740  
.142  
.717  
.039  
.024  
.310  
.160  
.085  
.096  
.098  
.050  
.210  
Peak Forward Surge  
Current  
8.3ms, half sine  
300A  
Maximum  
Instantaneous  
Forward Voltage  
Maximum DC Reverse  
Current At Rated DC  
Blocking Voltage  
IFM=12.5A  
TA = 25к  
VF  
1.0V  
10uA  
TA = 25к  
t<8.3ms  
K
L
M
N
IR  
7.0 TYPICAL  
I2t Rating for Fusing  
I2t  
510A2S  
Notes: 1. High Temperature Solder Exemption Applied, see EU Directive Annex Notes 7  
www.mccsemi.com  
Revision: B  
2017/03/13  
1 of 3  

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