GF1A - GF1M
Features
0.181 (4.597)
0.157 (3.988)
• Low forward voltage drop.
• High current capability.
• Easy pick and place.
0.062 (1.575)
0.055 (1.397)
0.114 (2.896)
0.098 (2.489)
2
1
• High surge current capability.
3.93
3.73
0.208 (5.283)
0.188 (4.775)
1.67
1.47
+
0.096 (2.438)
0.078 (1.981)
SMA/DO-214AC
COLOR BAND DENOTES CATHODE
2.38
2.18
5.49
5.29
0.008 (0.203)
0.002 (0.051)
0.012 (0.305)
0.006 (0.152)
0.060 (1.524)
0.030 (0.762)
Minimum Recommended
Land Pattern
1.0 Ampere Glass Passivated Rectifier
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
IO
Average Rectified Current
@ TL = 125°C
1.0
A
Peak Forward Surge Current
if(surge)
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
Total Device Dissipation
30
A
PD
2.0
13
W
mW/°C
Derate above 25°C
Thermal Resistance, Junction to Ambient **
80
RθJA
RθJC
Tstg
TJ
°C/W
Thermal Resistance, Junction to Case **
Storage Temperature Range
26
°C/W
°C
-65 to +175
-65 to +175
Operating Junction Temperature
°
C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
**Device mounted on PCB with 0.2 x 0.2" (5.0 x 5.0 mm) copper pad areas.
Electrical Characteristics
TA = 25°C unless otherwise noted
Parameter
Device
Units
1A
50
35
50
1B
100
70
1D
1G
400
280
400
1J
1K
1M
Peak Repetitive Reverse Voltage
Maximum RMS Voltage
200
140
200
600
420
600
800
560
800
1000
800
V
V
V
100
1000
DC Reverse Voltage (Rated VR)
Maximum Reverse Current
5.0
50
A
A
µ
µ
@ rated VR
TA = 25 C
°
TA = 125 C
°
Maximum Forward Voltage @ 1.0 A
1.0
1.2
V
Maximum Reverse Recovery Time
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
Typical Junction Capacitance
2.0
15
S
µ
pF
VR = 4.0 V, f = 1.0 MHz
GF1A-GF1M, Rev. E
1998 Fairchild Semiconductor International