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GBPC4002S PDF预览

GBPC4002S

更新时间: 2024-11-20 14:51:55
品牌 Logo 应用领域
WON-TOP /
页数 文件大小 规格书
4页 41K
描述
Single In-Line

GBPC4002S 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:PLASTIC, KBPC-S, SIP-4
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.92其他特性:HIGH RELIABILITY, UL RECOGNIZED
最小击穿电压:200 V配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
JESD-30 代码:R-PSFM-T4湿度敏感等级:1
最大非重复峰值正向电流:400 A元件数量:4
相数:1端子数量:4
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:40 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):225最大重复峰值反向电压:200 V
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED

GBPC4002S 数据手册

 浏览型号GBPC4002S的Datasheet PDF文件第2页浏览型号GBPC4002S的Datasheet PDF文件第3页浏览型号GBPC4002S的Datasheet PDF文件第4页 
®
GBPC40S SERIES  
40A GLASS PASSIVATED SINGLE PHASE BRIDGE RECTIFIER  
WON-TOP ELECTRONICS  
Features  
Glass Passivated Die Construction  
Low Forward Voltage Drop  
High Current Capability  
Low Thermal Resistance  
High Surge Current Capability  
Vertical Mount Ideally Suited for  
Space Constrained Applications  
Recognized File # E157705  
A
KBPC-S  
Dim  
A
Min  
Max  
28.80  
11.23  
J
28.30  
10.77  
13.90  
19.00  
4.60  
B
C
-
~
~ +  
D
E
5.60  
Mechanical Data  
C
G
H
1.20 Ø Typical  
3.05 3.60  
5.08 Ø Nominal  
Case: Epoxy Case with Heatsink Internally  
Mounted in the Bridge Encapsulation  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
D
J
All Dimensions in mm  
E E  
Polarity: As Marked on Body  
Mounting: Through Hole with #10 Screw  
Mounting Torque: 2.0 N.m Max.  
Weight: 21 grams (approx.)  
Marking: Type Number  
METAL HEATSINK  
B
G
H
Lead Free: For RoHS / Lead Free Version,  
Add “-LF” Suffix to Part Number, See Page 4  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.  
GBPC40  
Characteristic  
Symbol  
Unit  
00S 01S 02S 04S 06S 08S 10S 12S 14S 16S  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
50  
35  
100 200 400 600 800 1000 1200 1400 1600  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
70  
140 280 420 560 700 840 980 1120  
40  
V
A
Average Rectified Output Current @TC = 55°C  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single Half Sine-Wave Superimposed  
on Rated Load (JEDEC Method)  
IFSM  
500  
1.1  
A
Forward Voltage per leg  
@IF = 20A  
VFM  
IRM  
V
Peak Reverse Current  
@TC = 25°C  
10  
500  
µA  
At Rated DC Blocking Voltage @TC = 125°C  
I2t Rating for Fusing (t < 8.3ms)  
I2t  
CJ  
800  
300  
A2s  
pF  
Typical Junction Capacitance (Note 1)  
Typical Thermal Resistance (Note 2)  
RMS Isolation Voltage, t = 1min  
RθJC  
VISO  
1.4  
°C/W  
V
2500  
Operating and Storage Temperature Range  
TJ, TSTG  
-55 to +150  
°C  
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
2. Thermal resistance junction to case, mounted on 394 x 114 x 114mm Al. heatsink.  
© Won-Top Electronics Co., Ltd.  
Revision: September, 2012  
www.wontop.com  
1

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