Datasheet > GBPC3508S-LF

GBPC3508S-LF

更新时间： 2024-11-29 20:01:23

品牌	Logo	应用领域
WTE		局域网 PC 二极管
页数	文件大小	规格书
4页	69K
描述
Bridge Rectifier Diode, 1 Phase, 35A, 800V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, KBPC-S, SIP-4

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GBPC3508S-LF 数据手册

WTE

POWER SEMICONDUCTORS

GBPC35S SERIES

35A GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER

Features

ꢀ

Glass Passivated Die Construction

ꢀ

Low Forward Voltage Drop

High Current Capability

High Reliability

High Surge Current Capability

Designed for Saving Mounting Space

Recognized File # E157705

KBPC-S

Dim

Min

28.40

10.97

—

Max

28.70

11.23

21.00

25.00

—

~ +

—

5.10

Mechanical Data

1.20 Ø Typical

3.05 3.60

5.08 Ø Nominal

ꢀ

Case: KBPC-S, Molded Plastic with Heatsink

Internally Mounted in the Bridge Encapsulation

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

All Dimensions in mm

ꢀ

E E

ꢀ

Polarity: As Marked on Body

METAL HEATSINK

Mounting: Through Hole with #10 Screw

Mounting Torque: 23 cm-kg (20 in-lbs) Max.

Weight: 21 grams (approx.)

Marking: Type Number

Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 4

Maximum Ratings and Electrical Characteristics @T_A=25°C unless otherwise specified

Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.

GBPC35

Characteristic

Symbol

Unit

00S 01S 02S 04S 06S 08S 10S 12S 14S 16S

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

V^RWM

V^R

100 200 400 600 800 1000 1200 1400 1600

RMS Reverse Voltage

VR(RMS)

140 280 420 560 700 840 980 1120

Average Rectified Output Current @T_C= 50°C

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed

on rated load (JEDEC Method)

I^FSM

400

Forward Voltage per leg

@I_F= 17.5A

VFM

I^RM

1.1

Peak Reverse Current

@T_C= 25°C

5.0

500

µA

At Rated DC Blocking Voltage @T_C= 125°C

I²t Rating for Fusing (t < 8.3ms)

I²t

660

300

A²s

Typical Junction Capacitance (Note 1)

Typical Thermal Resistance per leg (Note 2)

RMS Isolation Voltage from Case to Leads

Operating and Storage Temperature Range

RθJC

VISO

1.4

°C/W

2500

Tj, TSTG

-65 to +150

°C

Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

2. Mounted on 229 x 89 x 117mm Al. finned plate.

GBPC35S SERIES

1 of 4

12 3 4

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与GBPC3508S-LF相关器件

型号	品牌	获取价格	描述	数据表
GBPC3508T	GENESIC	获取价格	Single Phase Glass Passivated Silicon Bridge Rectifier
GBPC3508T/W	AMERICASEMI	获取价格	BRIDGE RECTIFIERS
GBPC3508TA	ETC	获取价格	BRIDGE RECT 1PHASE 800V 35A GBPC
GBPC3508W	INFINEON	获取价格	SINGLE PHASE BRIDGE Power Modules
GBPC3508W	SURGE	获取价格	Bridge Rectifier Diode, 35A, 800V V(RRM),
GBPC3508W	GENESIC	获取价格	Single Phase Glass Passivated Silicon Bridge Rectifier
GBPC3508W	ONSEMI	获取价格	35 A 桥式整流器
GBPC3508W	CHENG-YI	获取价格	15/25/35 A GLASS PASSIVATED BRIDGE RECTIFIER
GBPC3508W	WTE	获取价格	35A GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER
GBPC3508W	DIODES	获取价格	35A GLASS PASSIVATED BRIDGE RECTIFIER

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