Datasheet > GBPC2501T

GBPC2501T

更新时间： 2024-11-21 01:01:59

品牌	Logo	应用领域
GENESIC		/
页数	文件大小	规格书
3页	342K
描述
Single Phase Glass Passivated Silicon Bridge Rectifier

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中文翻译

获取价格

数据手册

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GBPC2501T 数据手册

MURH10005 thru MURH10020R

V_RRM= 50 V - 200 V

I_F(AV)= 100 A

Silicon Super Fast

Recovery Diode

Features

• High Surge Capability

• Types from 50 V to 200 V V_RRM

• Not ESD Sensitive

D-67 Package

Maximum ratings, at T_j= 25 °C, unless otherwise specified ("R" devices have leads reversed)

Conditions

MURH10020(R)

Parameter

Symbol

MURH10005(R)

MURH10010(R)

Unit

V_RRM

200

Repetitive peak reverse voltage

100

V_RMS

V_DC

T_j

140

RMS reverse voltage

DC blocking voltage

Operating temperature

Storage temperature

200

100

-55 to 150

°C

T_stg

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Conditions

MURH10020(R)

Parameter

Symbol

MURH10005(R)

MURH10010(R)

Unit

Average forward current (per

pkg)

T_C= 140 °C

I_F(AV)

I_FSM

V_F

100

t_p= 8.3 ms, half sine

2000

Peak forward surge current

2000

Maximum instantaneous

forward voltage

_FM= 100 A, T_j= 25 °C

1.0

T_j= 25 °C

T_j= 125 °C

μA

Maximum reverse current at

rated DC blocking voltage

I_R

I_F=0.5 A, I_R=1.0 A,

T_rr

Maximum reverse recovery time

_RR= 0.25 A

Thermal characteristics

Maximum thermal resistance,

junction - case

R_ΘJC

0.45

°C/W

www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/

12 3

中文翻译

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GBPC2501T/W	AMERICASEMI	获取价格	BRIDGE RECTIFIERS
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GBPC2501W	WTE	获取价格	25A GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER
GBPC2501W	DIODES	获取价格	25A GLASS PASSIVATED BRIDGE RECTIFIER
GBPC2501W	PANJIT	获取价格	HIGH CURRENT SILICON BRIDGE RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 25 Amperes)
GBPC2501W	VISHAY	获取价格	Bridge Rectifier Diode, 1 Phase, 25A, 100V V(RRM), Silicon
GBPC2501W	SURGE	获取价格	Bridge Rectifier Diode,
GBPC2501W	GENESIC	获取价格	Single Phase Glass Passivated Silicon Bridge Rectifier
GBPC2501W	ONSEMI	获取价格	25 A 桥式整流器
GBPC2501W	WON-TOP	获取价格	Square Type