Datasheet > GBPC1502

GBPC1502

更新时间： 2023-12-06 20:00:03

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Bridge Rectifiers

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GBPC1502 数据手册

TH09/2479

IATF 0113686

TH97/2478

SGS TH07/1033

www.eicsemi.com

GLASS PASSIVATED SINGLE-

PHASE BRIDGE RECTIFIERS

GBPC15005 - GBPC1510

PRV : 50 - 1000 Volts

Io : 15 Amperes

BR50

0.728(18.50)

0.688(17.40)

FEATURES :

* Glass passivated junction chip

* High surge current capability

* High current capability

* High reliability

1.137(28.90)

1.114(28.30)

0.570(14.50)

0.530(13.40)

0.685(16.70)

0.618(15.70)

* Low reverse current

* Low forward voltage drop

* Pb / RoHS Free

0.210(5.30)

0.200(5.10)

0.658(16.70)

0.618(15.70)

MECHANICAL DATA :

* Case : Molded plastic with heatsink integrally

mounted in the bridge encapsulation

* Epoxy : UL94V-0 rate flame retardant

* Terminals : plated .25" (6.35 mm). Faston

* Polarity : Polarity symbols marked on case

* Mounting position : Bolt down on heat-sink with

silicone thermal compound between bridge

and mounting surface for maximum heat

transfer efficiency.

0.252(6.40)

0.248(6.30)

0.032(0.81)

0.028(0.71)

φ0.100(2.50)

0.090(2.30)

0.905(23.0)

0.826(21.0)

0.310(7.87)

0.280(7.11)

Metal Heatsink

Dimensions in inches and ( millimeters )

* Weight : 17.1 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25 °C ambient temperature unless otherwise noted.

GBPC GBPC GBPC GBPC GBPC GBPC GBPC

15005 1501 1502 1504 1506 1508 1510

RATING

SYMBOL

UNIT

V_RRM

V_RMS

V_DC

Maximum Repetitive Peak Reverse Voltage

Maximum RMS Bridge Input Voltage

100

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

Maximum DC Blocking Voltage

100

1000

I_F(AV)

Maximum Average Forward Current Tc = 50 °C (Fig.1)

Peak Forward Surge Current Single Sine Wave

Superimposed on Rated Load

I_FSM

300

375

1.1

I²t

A²sec

Rating for fusing (non-repetitive, 1ms < t < 8.3 ms)

at I_F= 7.5 A

Maximum Instantaneous Forward

Voltage Drop Per Diode

V_F

I_R

I_R(H)

Maximum DC Reverse Current at

Rated DC Blocking Voltage Per Diode

Ta = 25 °C

μA

500

300

1.9

Ta = 125 °C

C_J

Typical Junction Capacitance Per Diode (at 4 V, 1MHz)

(1)

R_ӨJC

T_J,T_STG

°C/W

°C

Typical Thermal Resistance form Junction to Case

- 55 to + 150

Operating Junction and Storage Temperature Range

Note : (1) With heatsink

Page 1 of 2

Rev. 00 : June 24, 2009

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