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GBPC1210-E4 PDF预览

GBPC1210-E4

更新时间: 2024-11-11 19:32:59
品牌 Logo 应用领域
威世 - VISHAY 局域网PC二极管
页数 文件大小 规格书
5页 222K
描述
DIODE 12 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE, LEAD FREE, PLASTIC, GBPC, 4 PIN, Bridge Rectifier Diode

GBPC1210-E4 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active包装说明:S-PUFM-D4
针数:4Reach Compliance Code:unknown
HTS代码:8541.10.00.80风险等级:5.27
Is Samacsys:N其他特性:UL RECOGNIZED
外壳连接:ISOLATED配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
最大正向电压 (VF):1.1 VJESD-30 代码:S-PUFM-D4
最大非重复峰值正向电流:200 A元件数量:4
相数:1端子数量:4
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:12 A封装主体材料:PLASTIC/EPOXY
封装形状:SQUARE封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT APPLICABLE认证状态:Not Qualified
最大重复峰值反向电压:1000 V子类别:Bridge Rectifier Diodes
表面贴装:NO端子面层:Nickel (Ni)
端子形式:SOLDER LUG端子位置:UPPER
处于峰值回流温度下的最长时间:NOT APPLICABLEBase Number Matches:1

GBPC1210-E4 数据手册

 浏览型号GBPC1210-E4的Datasheet PDF文件第2页浏览型号GBPC1210-E4的Datasheet PDF文件第3页浏览型号GBPC1210-E4的Datasheet PDF文件第4页浏览型号GBPC1210-E4的Datasheet PDF文件第5页 
GBPC12, 15, 25 and 35  
Vishay General Semiconductor  
Glass Passivated Single-Phase Bridge Rectifier  
GBPC-W  
GBPC  
~
Major Ratings and Characteristics  
IF(AV)  
VRRM  
IFSM  
IR  
12 A, 15 A, 25 A, 35 A  
~
50 V to 1000 V  
200 A, 300 A, 300 A, 400 A  
5 µA  
1.1 V  
~
~
VF  
~
Tj max.  
150 °C  
~
Features  
Mechanical Data  
• UL Recognition file number E54214  
Case: GBPC, GBPC-W  
• Universal 3-way terminals: snap-on, wire wrap-  
around, or P.C.B. mounting  
Epoxy meets UL-94V-0 Flammability rating  
Terminals: Nickel plated on faston lugs or Silver  
plated on wire leads (E4 Suffix), solderable per  
J-STD-002B and JESD22-B102D. Suffix letter "W"  
added to indicate wire leads  
GBPC12005W)  
• Typical I less than 0.3 µA  
R
• High surge current capability  
• Low thermal resistance  
• Solder Dip 260 °C, 40 seconds  
(e.g.  
Polarity: As marked, Positive lead by belevled corner  
Mounting Torque: 20 inches-lbs. max.  
Typical Applications  
General purpose use in ac-to-dc bridge full wave rec-  
tification for Power Supply, Home Appliances, Office  
Equipment, Industrial Automation applications  
Maximum Ratings  
Ratings at 25 °C ambient temperature unless otherwise specified.  
Parameter  
Symbols  
GBPC12, 15, 25, 35  
Units  
005  
50  
01  
100  
70  
02  
04  
06  
08  
10  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
A
35  
Maximum DC blocking voltage  
50  
100  
1000  
Maximum average forward rectified output GBPC12  
current (See Fig.1)  
IF(AV)  
12  
15  
25  
GBPC15  
GBPC25  
GBPC35  
GBPC12  
GBPC15  
GBPC25  
GBPC35  
GBPC12  
GBPC15  
GBPC25  
GBPC35  
35  
Peak forward surge current single sine-  
wave superimposed on rated load  
IFSM  
200  
300  
300  
400  
160  
375  
375  
660  
2500  
A
I2t  
A2 sec  
Rating (non-repetitive, for t greater than  
1 ms and less than 8.3 ms) for fusing  
RMS isolation voltage from case to leads  
VISO  
V
Operating junction storage temperature range  
TJ, TSTG  
- 55 to + 150  
°C  
Document Number 88612  
08-Jul-05  
www.vishay.com  
1

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