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GBPC1204M PDF预览

GBPC1204M

更新时间: 2024-11-21 21:09:51
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 局域网PC二极管
页数 文件大小 规格书
3页 51K
描述
Bridge Rectifier Diode, 1 Phase, 12A, 400V V(RRM), Silicon, GBPC-M, 4 PIN

GBPC1204M 技术参数

生命周期:Obsolete包装说明:S-XUFM-D4
针数:4Reach Compliance Code:unknown
HTS代码:8541.10.00.80风险等级:5.65
其他特性:UL RECOGNIZED最小击穿电压:400 V
外壳连接:ISOLATED配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
最大正向电压 (VF):1.1 VJESD-30 代码:S-XUFM-D4
最大非重复峰值正向电流:300 A元件数量:4
相数:1端子数量:4
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:12 A封装主体材料:UNSPECIFIED
封装形状:SQUARE封装形式:FLANGE MOUNT
最大功率耗散:83.3 W认证状态:Not Qualified
最大重复峰值反向电压:400 V子类别:Bridge Rectifier Diodes
表面贴装:NO端子形式:SOLDER LUG
端子位置:UPPERBase Number Matches:1

GBPC1204M 数据手册

 浏览型号GBPC1204M的Datasheet PDF文件第2页浏览型号GBPC1204M的Datasheet PDF文件第3页 
GBPC 12, 15, 25, 35 SERIES  
Bridege Rectifiers (Glass Passivated)  
Features  
Integrally molded heatsink provided very low thermal resistance for maximum heat dissipation.  
Surge ovrload rartings from 300 amperes to 400 amperes.  
Isolated voltage from case to lead over 2500 volts.  
UL certified, UL #E96005  
Suffix “W”  
Wire Lead Structure  
Suffix “M”  
Terminal Location Face to Face  
~
+
~
~
~
+
GBPC-W  
GBPC  
Absolute Maximum Ratings *  
T = 25°C unless otherwise noted  
a
Value  
Symbol  
Parameter  
Units  
005 01  
02  
200  
140  
200  
04  
400  
280  
400  
06  
08  
800  
560  
800  
10  
1000  
700  
V
Maximum Repetitive Reverse Voltage  
Maximum RMS Bridge Input Voltage  
50  
35  
50  
100  
70  
600  
420  
600  
V
V
V
RRM  
RMS  
R
V
V
DC Reverse Voltage (Rated V )  
100  
1000  
R
I
Average Recitified Forward Current  
F(AV)  
@ T = 55°C  
GBPC12  
GBPC15  
GBPC25  
GBPC35  
12  
15  
25  
35  
A
A
A
A
A
I
Non-Repetitive Peak Forward Surge Current  
GBPC12, 25, 25  
FSM  
300  
A
8.3ms Single Half-Sine-Wave  
GBPC35  
400  
A
T
T
Storage Temperature Range  
-55 to +150  
-55 to +150  
°C  
°C  
STG  
J
Operating Junction Temperature  
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.  
Thermal Characteristics  
Symbol  
Parameter  
Value  
83.3  
Units  
P
Power Dissipation  
Thermal Resistance, Junction to Lead  
W
D
R
1.5  
°C/W  
θJL  
©2004 Fairchild Semiconductor Corporation  
GBPC 12, 15, 25, 35 SERIES Rev. C1  
1
www.fairchildsemi.com  

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