301
307
GBP
THRU GBP
SINGLE-PHASE SILICON BRIDGE RECTIFIER
REVERSE VOLTAGE:
FORWARD CURRENT:
50 to 1000 VOLTS
3.0 AMPERE
.110X45°
(2.8)
.580(14.75)
.561(14.25)
.142(3.6)
.133(3.4)
FEATURES
· Reliable low cost construction utilizing molded
plastic technique
.417(10.60)
.410(10.20)
· Ideal for printed circuit board
· Low forward voltage drop
· Low reverse leakage current
· High surge current capability
.043(1.1)
.028(0.7)
.106(2.7)
.091(2.3)
.610(15.5)
.056(1.42)
.046(1.17)
.034(.86)
.030(.76)
MECHANICAL DATA
.571(14.5)
Case: Molded plastic,
GBP
.024(0.6)
.012(0.3)
Epoxy: UL 94V-O rate flame retardant
Terminals: Leads solderable per MIL-STD-202,
method 208 guaranteed
.160(4.06)
.140(3.56)
Dimensions in milimeters
Mounting position: Any
Weight: 0.05 ounces , 1.42grams
Package:GBP
Maximum Ratings and Electrical Characteristics
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60HZ, resistive or inductive load.
For capacitive load, derate current by 20%.
Symbols
Units
Volts
Volts
Volts
GBP301 GBP302 GBP303 GBP304 GBP305 GBP306 GBP307
VRRM
VRMS
VDC
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
50
35
50
100
70
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
.375"(9.5mm) Lead Length at TA=50℃
Peak Forward Surge Current,
100
1000
I(AV)
Amp
3.0
IFSM
Amp
80
8.3ms single half-sine-wave
superimposed on rated load (JEDEC method)
Maximum Forward Voltage
VF
IR
Volts
1.1
at 3.0A DC and 25℃
at TA=25℃
TA=100℃
10.0
Maximum Reverse Current
at Rated DC Blocking Voltage
uAmp
500
CJ
RθJA
25
30
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Typical Thermal Resistance (Note 2)
Operating and Storage Temperature Range
pF
℃/W
℃/W
℃
RθJL
11
-55 to +150
TJ,Tstg
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance Junction to Ambient and form junction to lead at 0.375"(9.5mm) lead length P.C.B. Mounted.
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