Datasheet > GBLNBB01-5DL8

GBLNBB01-5DL8

更新时间： 2024-04-09 18:58:56

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	434K
描述
18A, 150V, 46W, N Channel, Dual MOSFETs

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数据手册

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GBLNBB01-5DL8 数据手册

Dual N-Channel Enhancement Mode MOSFET

GBLNBB01-5DL8

Features



High speed power switching

Enhanced Avalanche Ruggedness

Enhanced body diode dv/dt capability

Mechanical Data



Case: PDFN5×6-8LC



Molding Compound: UL Flammability Classification

Rating 94V-0



Terminals: Matte tin-plated leads; solderability-per

MIL-STD-202, Method 208

PDFN5×6-8LC

Ordering Information

Part Number

Package

PDFN5×6-8LC

Shipping Quantity

5000 pcs / Tape & Reel

Marking Code

GBLNBB01-5DL8

GBLNBB01

Maximum Ratings (@ T_J= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

150

±20

Gate-to-Source Voltage

Continuous Drain Current (T_C= 25°C)

Continuous Drain Current (T_C= 100°C)

Pulsed Drain Current

I_D

I_DM

Avalanche Energy, Single Pulsed (L = 0.4mH, T_C= 25°C)

E_AS

Thermal Characteristics

Parameter

Symbol

Value

Unit

Power Dissipation (T_C= 25°C)

P_D

R_θJA

R_θJC

T_J

°C/W

°C

Thermal Resistance Junction-to-Air

Thermal Resistance Junction-to-Case

Operating Junction Temperature Range

Storage Temperature Range

2.7

-55 ~ +150

T_STG

°C

MTM0406A: December 2020

www.gmesemi.com

12 3 4 5

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