Datasheet > GBLNAA01-5DL8

GBLNAA01-5DL8

更新时间： 2024-04-09 18:58:54

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	648K
描述
25A, 100V, 50W, N Channel, Dual MOSFETs

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GBLNAA01-5DL8 数据手册

Dual N-Channel Enhancement Mode MOSFET

GBLNAA01-5DL8

Features



Low R_DS(ON)& FOM

Extremely low switching loss

Excellent stability and uniformity

Mechanical Data



Case: PDFN5×6-8LC

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,

Method 208

PDFN5×6-8LC

Ordering Information

Part Number

Package

PDFN5×6-8LC

Shipping Quantity

Marking Code

GBLNAA01-5DL8

5000 pcs / Tape & Reel

GBLNAA01

Maximum Ratings (@ T_C= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

100

±20

Gate-to-Source Voltage

Continuous Drain Current (T_C= 25°C) ^*5

(bondwire limited)

I_D

Continuous Drain Current (T_C= 25°C) (silicon limited)

Continuous Drain Current (T_C= 100°C) ^*5

Pulsed Drain Current ^*3

I_DM

100

Single Pulse Avalanche Energy ^{*3, 6}

E_AS

Thermal Characteristics

Parameter

Symbol

Value

Unit

Power Dissipation (T_C= 25°C) ^*2

P_D

R_θJA

R_θJC

T_J

°C /W

°C

Thermal Resistance Junction-to-Air ^*4

Thermal Resistance Junction-to-Case^*1

Operating Junction Temperature Range

Storage Temperature Range

2.5

-55 ~ +150

T_STG

°C

MTM0971A: November 2022 [P]

www.gmesemi.com

12 3 4 5

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