Datasheet > GBLH6601-S8

GBLH6601-S8

更新时间： 2024-04-09 18:59:43

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
8页	589K
描述
60V, -60V, N+P Channel MOSFETs

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数据手册

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GBLH6601-S8 数据手册

P＋N-Channel Enhancement Mode MOSFET

GBLH6601-S8

Features



Reliable and Rugged



Green device available

Applications



Synchronous Rectification

Motor Control

Portable equipment application

Mechanical Data



Case: SOP-8

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,

Method 208

SOP-8

Ordering Information

Part Number

Package

Shipping Quantity

Marking Code

GBLH6601-S8

SOP-8

4000 pcs / Tape & Reel

GBLH6601

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Symbol

Unit

Drain-to-Source Voltage

V_DSS

V_GSS

±20

-60

±20

-4

Gate-to-Source Voltage

Continuous Drain Current (T_A= 25°C) ^*1

Continuous Drain Current (T_A= 100°C) ^*1

Pulsed Drain Current(t_p= 10μs, T_A= 25°C )

Single Pulse Avalanche Energy ^*4

Power Dissipation (T_A= 25°C) ^*1

Power Dissipation (T_A= 25°C) ^*2

Operating Junction Temperature Range

Storage Temperature Range

I_D

3.2

-2.5

-20

I_DM

E_AS

°C

P_D

1.25

T_J

-55 ~ +150

T_STG

Thermal Characteristics

Parameter

Symbol

Min.

Typ.

Max.

Unit

Thermal Resistance Junction-to-Case

Thermal Resistance Junction-to-Air ^*1

Thermal Resistance Junction-to-Air ^*2

R_θJC

°C /W

62.5

100

R_θJA

MTM0610A: December 2023 [2.0]

www.gmesemi.com

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