Datasheet > GBLH3302-3DL8

GBLH3302-3DL8

更新时间： 2024-12-02 17:01:23

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
8页	646K
描述
N:35A, 30V, 6.25W, Dual MOSFETs P:-49A, -30V, 10.4W, Dual MOSFETs

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数据手册

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GBLH3302-3DL8 数据手册

P＋N-Channel Enhancement Mode MOSFET

GBLH3302-3DL8

Features



Reliable and Rugged



Green device available

Applications



Synchronous Rectification

Motor Control

Protable equipment application

Mechanical Data



Case: PDFN3×3-8LC



Molding Compound: UL Flammability Classification

Rating 94V-0



Terminals: Matte tin-plated leads; solderability-per

MIL-STD-202, Method 208

PDFN3×3-8LC

Ordering Information

Part Number

Package

Shipping Quantity

Marking Code

GBLH3302-3DL8

PDFN3×3-8LC

5000 pcs / Tape & Reel

GBLH3302

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Symbol

TR1

TR2

Unit

Drain-to-Source Voltage

V_DSS

V_GSS

±20

-30

±20

-49

-31

-196

-3.5

Gate-to-Source Voltage

Continuous Drain Current (T_C= 25°C) ^*3

Continuous Drain Current (T_C= 100°C) ^*3

Pulsed Drain Current (T_C= 25°C) ^*1

Diode Continuous Forward Current ^{*2, 3}

Single Pulse Avalanche Energy ^*5

I_D

I_DM

I_S

140

E_AS

Thermal Characteristics

Parameter

Symbol

P_D

TR1

6.25

100

TR2

10.4

100

Unit

Power Dissipation (T_C= 25°C) ^*1

Thermal Resistance Junction-to-Air ^*3

Thermal Resistance Junction-to-Case

Operating Junction Temperature Range

Storage Temperature Range

R_θJA

R_θJC

T_J

°C /W

°C

-55 ~ +150

T_STG

°C

MTM0477A: August 2023 [1.1]

www.gmesemi.com

12 3 4 5 6 7 8

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