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GBLH2203-3DL8 PDF预览

GBLH2203-3DL8

更新时间: 2024-12-02 17:01:47
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical /
页数 文件大小 规格书
8页 909K
描述
20V, -20V, N+P Channel MOSFETs

GBLH2203-3DL8 数据手册

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PN-Channel Enhancement Mode MOSFET  
GBLH2203-3DL8  
Features  
Reliable and Rugged  
Green device available  
Applications  
Synchronous Rectification  
Motor Control  
Protable equipment application  
Mechanical Data  
Case: PDFN3×3-8LC  
Molding Compound: UL Flammability Classification Rating 94V-0  
Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,  
Method 208  
PDFN3×3-8LC  
Ordering Information  
Part Number  
Package  
Shipping Quantity  
Marking Code  
GBLH2203-3DL8  
PDFN3×3-8LC  
5000 pcs / Tape & Reel  
GBLH2203  
Maximum Ratings (@ TC = 25°C unless otherwise specified)  
Parameter  
Symbol  
TR1  
TR2  
Unit  
Drain-to-Source Voltage  
VDSS  
VGSS  
20  
±12  
24  
-20  
±12  
-24  
-15  
-48  
18  
V
V
Gate-to-Source Voltage  
Continuous Drain Current (TC = 25°C)  
Continuous Drain Current (TC = 100°C)  
Pulsed Drain Current (tp = 10μs, TC = 25°C )  
Power Dissipation (TC = 25°C)  
A
ID  
15  
A
IDM  
PD  
48  
A
18  
W
°C  
°C  
Operating Junction Temperature Range  
Storage Temperature Range  
TJ  
-55 ~ +150  
-55 ~ +150  
TSTG  
Thermal Characteristics  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Thermal Resistance Junction-to-Case  
Thermal Resistance Junction-to-Air *1  
RθJC  
RθJA  
-
-
-
-
7
°C /W  
°C /W  
60  
MTM1352A: August 2023 [P]  
www.gmesemi.com  
1

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