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GBL6005 PDF预览

GBL6005

更新时间: 2024-11-26 15:18:11
品牌 Logo 应用领域
扬杰 - YANGJIE /
页数 文件大小 规格书
4页 222K
描述
2KBJ

GBL6005 数据手册

 浏览型号GBL6005的Datasheet PDF文件第2页浏览型号GBL6005的Datasheet PDF文件第3页浏览型号GBL6005的Datasheet PDF文件第4页 
RoHS  
GBL6005 THRU GBL610  
Bridge Rectifiers  
COMPLIANT  
Features  
● UL recognition, file #E230084  
● Glass passivated chip junction  
● Thin single in-line package  
● High surge current capability  
● Solder dip 275 °C max. 7 s, per JESD 22-B106  
Typical Applications  
General purpose use in AC/DC bridge full wave rectification  
for switching power supply, home appliances, office  
equipment, industrial automation applications.  
Mechanical Data  
ackage: 2KBJ  
P
Molding compound meets UL 94 V-0 flammability  
rating, RoHS-compliant  
Terminals: Tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
As marked on body  
Polarity:  
-
+
~ ~  
(T =25Unless otherwise specified  
Maximum Ratings  
a
GBL6005 GBL601 GBL602 GBL604 GBL606 GBL608 GBL610  
PARAMETER  
SYMBOL UNIT  
GBL6005 GBL601  
GBL602  
200  
GBL604  
400  
GBL606  
600  
GBL608  
800  
GBL610  
1000  
Device marking code  
V
V
V
V
V
A
Maximum Repetitive Peak Reverse Voltage  
Maximum RMS Voltage  
50  
35  
50  
100  
70  
RRM  
RMS  
140  
280  
420  
560  
700  
V
Maximum DC blocking Voltage  
Average Rectified Output Current  
@60Hz sine wave, R-load, T =25℃  
100  
200  
400  
600  
800  
1000  
DC  
I
O
6.0  
a
Forward Surge Current (Non-repetitive)  
@60Hz Half-sine wave,1 cycle, Tj=25℃  
Forward Surge Current (Non-repetitive)  
150  
I
A
FSM  
280  
@1ms, square wave, 1 cycle, Tj=25℃  
Current squared time  
I2t  
A2S  
78.4  
@1ms≤t≤8.3ms Tj=25,rating of per diode  
Dielectric strength  
@ terminals to case, AC 1 minute  
Vdis  
KV  
2
T
stg  
Storage temperature  
Junction temperature  
-55 ~ +150  
T
j
-55 ~ +150  
Ta=25Unless otherwise specified)  
Electrical Characteristics  
TEST  
GBL6005 GBL601 GBL602 GBL604 GBL606 GBL608 GBL610  
PARAMETER  
SYMBOL  
UNIT  
CONDITIONS  
Maximum instantaneous forward  
voltage drop per diode  
V
V
1.0  
5
F
I
FM  
=3.0A  
Maximum DC reverse current at  
rated DC blocking voltage per  
diode  
T =25℃  
j
I
μA  
pF  
R
100  
T =125℃  
j
Measured at  
1MHz and  
Applied Reverse  
Voltage of 4.0  
V.D.C  
Typical junction capacitance  
Cj  
45  
1 / 4  
S-B685  
Rev. 2.3, 21-Dec-23  
Yangzhou Yangjie Electronic Technology Co., Ltd.  
www.21yangjie.com  

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