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GBJ806

更新时间: 2024-01-30 12:18:00
品牌 Logo 应用领域
DIOTECH 二极管局域网
页数 文件大小 规格书
2页 820K
描述
GLASS PASSIVATED BRIDGE RECTIFIER

GBJ806 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Active包装说明:R-PSFM-T4
针数:4Reach Compliance Code:not_compliant
HTS代码:8541.10.00.80Factory Lead Time:45 weeks
风险等级:1.75其他特性:UL RECOGNIZED
最小击穿电压:600 V外壳连接:ISOLATED
配置:BRIDGE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODE最大正向电压 (VF):1 V
JESD-30 代码:R-PSFM-T4JESD-609代码:e3
最大非重复峰值正向电流:170 A元件数量:4
相数:1端子数量:4
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:8 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:600 V子类别:Bridge Rectifier Diodes
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED

GBJ806 数据手册

 浏览型号GBJ806的Datasheet PDF文件第2页 
GBJ8005 THRU GBJ810  
GLASS PASSIVATED BRIDGE RECTIFIER  
Reverse Voltage - 50 to 1000 Volts  
Forward Current - 8.0 Ampere  
FEATURES  
Glass passivated chip junction  
Reliable low cost construction utilizing molded  
GBJ  
plastic technique  
Ideal for printed circuit board  
Low reverse leakage current  
Low forward voltage drop  
High surge current capabiliy  
MECHANICAL DATA  
Case:Molded plastic, GBJ  
Terminals  
:
Terminals: Leads solderable per MIL-STD-202  
method 208 guaranteed  
Epoxy: UL 94V-0 rate flame retardant  
Mounting Position: Any  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 C ambient temperature unless otherwise specified.  
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.  
GBJ  
8005  
GBJ GBJ GBJ GBJ GBJ GBJ  
801 802 804 806 808 810  
Symbols  
Units  
Parameter  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100 200 400 600 800 1000  
70 140 280 420 560 700  
V
V
V
Maximum DC Blocking Voltage  
100 200 400 600 800 1000  
10  
Maximum Average Forward Rectified Current with  
Heatsink at TC = 100 OC  
I(AV)  
A
Peak Forward Surge Current, 8.3 ms Single Half-Sine  
-Wave superimposed on rated load (JEDEC Method)  
IFSM  
VF  
IR  
170  
1.1  
A
V
Maximum Forward Voltage at 4.0 A DC and 25 OC  
Maximum Reverse Current at TA = 25OC  
at Rated DC Blocking Voltage TA = 125OC  
5.0  
µA  
500  
Typical Junction Capacitance 1)  
CJ  
55  
1.6  
pF  
OC/W  
OC  
Typical Thermal Resistance 2)  
RθJC  
Operating and Storage Temperature Range  
TJ,TS  
-55 to +150  
1) Measured at 1 MHz and applied reverse voltage of 4 VDC.  
2) Thermal resistance from junction to case with device mounted on 300 mm X 300 mm X 1.6 mm Cu plate  
heatsink.  

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