Datasheet > GBJ6G

GBJ6G

更新时间： 2024-01-21 05:12:41

品牌	Logo	应用领域
SECOS		二极管局域网
页数	文件大小	规格书
2页	254K
描述
6.0 AMP Glass Passivated Bridge Rectifiers

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技术参数
数据手册

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GBJ6G 技术参数

生命周期：	Active	包装说明：	R-PSFM-T4
Reach Compliance Code：	compliant	风险等级：	5.57
最小击穿电压：	1000 V	外壳连接：	ISOLATED
配置：	BRIDGE, 4 ELEMENTS	二极管元件材料：	SILICON
二极管类型：	BRIDGE RECTIFIER DIODE	JESD-30 代码：	R-PSFM-T4
最大非重复峰值正向电流：	180 A	元件数量：	4
相数：	1	端子数量：	4
最高工作温度：	150 °C	最低工作温度：	-55 °C
最大输出电流：	2.8 A	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
最大重复峰值反向电压：	1000 V	表面贴装：	NO
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
Base Number Matches：	1

GBJ6G 数据手册

GBJ6A ~ GBJ6M

VOLTAGE 50V ~ 1000V

Elektronische Bauelemente

6.0 AMP Glass Passivated Bridge Rectifiers

RoHS Compliant Product

A suffix of “-C” specifies halogen-free.

ƔFEATURES

Surge overload rating – 125 amperes peak

Ideal for printed circuit board

Reliable low cost construction utilizing

Molded plastic technique

Plastic material has underwrites laboratory

Flammability classification 94V-0

Polarity: marked on body

Mounting position: Any

ƔMAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating 25 к ambient temperature unless otherwise specified.

Resistive or inductive load, 60Hz,

For capacitive load, derate current by 20%.

GBJ6A

GBJ6B

100

GBJ6D

200

140

GBJ6G

400

280

400

6.0

GBJ6J

600

420

GBJ6K

800

560

GBJ6M

1000

700

TYPE NUMBER

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward (with heatsink Note2)

Rectified Current @ T_C=100к(without heatsink)

Peak Forward Surge Current, 8.3 ms single

half Sine-wave superimposed

SYMBOL

V_RRM

V_RMS

UNITS

V_DC

100

200

600

800

1000

I_(AV)

I_FSM

2.8

170

on rated load (JEDEC method)

Maximum Forward Voltage at 2.0A

Maximum DC Reverse Current Ta=25 к

at Rated DC Blocking Voltage Ta=125 к

I²t Rating for fusing (t<8.3ms)

V_F

I_R

I²t

1.0

5.0

500

120

µA

A²S

Typical Junction Capacitance

per element (Note1)

C_J

Typical Thermal Resistance (Note 2)

Operating Temperature Range

Storage Temperature Range

R_șJC

T_J

T_STG

1.8

- 55 ~ + 150

к / W

NOTES:

1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

2. Device mounted on 75mm x 75mm x 1.6mm Cu Plate Heatsink.

http://www.SeCoSGmbH.com/

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 1 of 2

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