Datasheet > GBJ6005_V01

GBJ6005_V01

更新时间： 2022-02-26 14:34:25

品牌	Logo	应用领域
辰达行 - MDD		/
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描述
SILICON BRIDGE RECTIFIERS

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GBJ6005_V01 数据手册

GBJ6005 THRU GBJ610

Reverse Voltage - 50 to 1000 Volts Forward Current - 6.0 Amperes

SILICON BRIDGE RECTIFIERS

Features

GBJ

? .134(3.4)

? .122(3.1)



Ideal for printed circuit board

.189(4.8)

1.193(30.3)

1.169(29.7)

.173(4.4)

.150(3.8)

.134(3.4)

Reliable low cost construction utilizing molded plastic technique

Plastic material has U/L lammability classification 94V-0

Low forward voltage drop,high current capability

.118(3.0)*45°

.106(2.7)

.096(2.3)

Mechanical Data

.094(2.4)

.078(2.0)

.043(1.1)

.035(0.9)

.114(2.9)

.098(2.5)

Case : JEDEC GBJ Molded plastic body

Terminals : Solder plated, solderable per MIL-STD-750,Method 2026

Polarity : Polarity symbol marking on body

Mounting Position: Any

.031(0.8)

.023(0.6)

.402(10.2)

.386(9.8)

.303(7.7).303(7.7)

SPACING

.287(7.3)

Dimensions in inches and (millimeters)

Maximum Ratings And Electrical Characteristics

Ratings at 25°C ambient temperature unless otherwisespecified.

Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.

GBJ

6005

GBJ

601

GBJ

602

GBJ

604

GBJ

606

GBJ

608

GBJ

610

Parameter

SYMBOLS

UNITS

MDD MDD MDD MDD MDD MDD MDD

Marking Code

GBJ

6005

GBJ

601

100

GBJ

602

200

GBJ

604

400

GBJ

606

600

GBJ

608

800

GBJ

610

1000

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V^RRM

V^RMS

V^DC

100

140

200

280

400

420

600

560

800

700

1000

Maximum DC blocking voltage

Maximum average forward(with heatsink NOTE 2)

Rectified current @T c =100°C(without heatsink)

Peak forward surge current

6.0

3.3

I^(AV)

8.3ms single half sine-wave superimposed on

rated load (JEDEC Method)

Rating for Fusing(t<8.3ms)

I^FSM

175.0

A²s

I²t

V^F

127.0

1.0

Maximum forward voltage at 3.0A DC

1.1

Maximum forward voltage at 6.0A DC

500

Maximum DC reverse current

at rated DC blocking voltage

T^A=25°C

TA=125°C

I^R

Typical Junction Capacitance (Note 1)

Typical Thermal Resistance (Note 2)

Operating junction temperature range

storage temperature range

C^J

R^θ^JA

T^J

T^STG

1.8

°C/W

° C

-55 to +150

NOTES:

1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

2.Device mounted on 75mm*75mm*1.6mm cu plate heatsink.

3.The typical data above is for reference only.

DN:T19812A0

https://www.microdiode.com

Rev:2019A0

Page :1

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