Datasheet > GBJ3508P

GBJ3508P

更新时间： 2024-01-11 21:53:25

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
3页	75K
描述
DIODE 35 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, GBJ, 4 PIN, Bridge Rectifier Diode

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技术参数
数据手册

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GBJ3508P 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	包装说明：	PLASTIC, GBJ, 4 PIN
针数：	4	Reach Compliance Code：	unknown
风险等级：	5.21	Base Number Matches：	1

GBJ3508P 数据手册

GBJ35005

THRU

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Micro Commercial Components

GBJ3510

35 Amp

Features

Rating to 1000V PRV

Ideal for printed circuit board

Glass Passivated

Bridge Rectifier

50 to 1000 Volts

Low forward voltage drop, high current capability.

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

UL Recognized File # E165989

GBJ

Maximum Ratings

•

Operating Temperature: -55°C to +150°C

Storage Temperature: -55°C to +150°C

MCC

Catalog

Number

Device

Marking

Maximum

Reccurrent

Peak Reverse

Voltage

50V

Maximum Maximum

RMS

Voltage

Blocking

Voltage

50V

GBJ35005

GBJ3501

GBJ3502

GBJ3504

GBJ3506

GBJ3508

GBJ3510

35V

70V

GBJ35005

GBJ3501

GBJ3502

GBJ3504

GBJ3506

GBJ3508

GBJ3510

100V

200V

400V

600V

800V

1000V

100V

140V

280V

420V

560V

700V

200V

400V

600V

800V

1000V

DIMENSIONS

Electrical Characteristics @ 25°C Unless Otherwise Specified

INCHES

DIM

MIN

1.170

.780

.670

.019

.430

.090

.120

.130

.170

.100

.020

.080

.040

.390

MAX

1.190

.800

.710

.019

.440

.110

.130

.150

.190

.110

.030

.090

.040

.400

MIN

29.70

19.70

17.00

4.70

10.80

2.30

3.10

3.40

4.40

2.50

0.60

2.00

0.90

9.80

MAX

NOTE

Average Forward

Current

I_F(AV)

35 A

Tc = 100°C

30.30

20.30

18.00

4.90

11.20

2.70

3.40

3.80

4.80

2.90

0.80

2.40

1.10

10.20

7.70

4.20

Peak Forward Surge

Current

I_FSM

350A

8.3ms, half sine

Maximum

Instantaneous

Forward Voltage

Maximum DC

Reverse Current At

Rated DC Blocking

Voltage

I^FM= 17.5 A

V_F

I_R

1.05V

T_J= 25°C

10 µA TJ = 25°C

500uA

T^J= 125°C

.290

.150

.300

.170

7.30

3.80

Typical thermal

resistance

Typical Junction

Capacitance

R_OJC

C_J

0.6 /W

85 pF

°C

Measured at

1.0MHz, V_R=4.0V

*Pulse Test: Pulse Width 300µsec, Duty Cycle 1%

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Revision: 2

2006/05/29

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