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GBJ3508G

更新时间： 2024-11-10 02:52:35
品牌 Logo 应用领域
纽航 - NIUHANG /
页数 文件大小 规格书
3页 415K
描述
BRIDGE RECTIFIERS

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中文翻译

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GBJ3508G 数据手册

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Niu Hang  
Specification  
For Approval  
Electronic Co. Ltd  
GBJ3506G THRU GBJ3510G  
BRIDGE RECTIFIERS  
50 THRU 1000 Volts  
35.0 Ampers GBJ  
Marking  
VOLTAGE  
CURRENT  
FEATURES  
GBJ3510G  
·
·
·
·
·
Glass passivated die construction  
low forward voltage drop  
xxxx  
xxx  
High current capability  
High surge current capability  
Plastic material-UL flammability 94V-0  
MECHANICAL DATA  
·
·
Case: GBJ , olded lastic  
Terminals: Plated Leads Solderable per MIL-STD-202, Method 208  
·
·
·
·
Polarity: As Marked on Case  
Mounting Position: Any  
Marking: Type Number  
Lead Free: For RoHS / Lead Free Version  
Remark:  
(1).NH=niuhang trademark;  
(2).xxxxx/xxx:  
TYPICAL APPLICATIONS  
The first five xxxxx:Periodic code,According to actual changes;  
The last three xxx:Production line,According to actual changes;  
(3).GBJ3510G=Modle;  
·
For use in low voltage ,high frequency inverters ,DC/DC  
converters,free wheeling ,and polarity protection applications  
(4).+ ~ ~ -=Polarity mark  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C(UNLESS OTHERWISE NOTED)  
Single phase,half wave,60Hz,resistive or inductive load.For capacitive load,derate current by 20%  
Parameter  
Symbol GBJ3506G GBJ3508G GBJ3510G  
Unit  
V RRM  
V RMS  
V RMS  
600  
420  
600  
800  
560  
800  
35.0  
1000  
700  
V
V
V
Maximum Repetitive Peak Reverse Voltage  
Maximum RMS Voltag  
1000  
Maximum DC Blocking Voltage  
with heatsink  
Maximum Average Forward Rectified Current  
@ TC=100°C (see fig.1)  
IF(AV)  
A
without heatsink  
3.6  
Peak Forward Surge Current 8.3ms Single Half Sine-wave Superimposed On Rate Load  
(JEDEC Method)  
IFSM  
350  
A
Current Squared Time Per Diode(t<8.3ms)  
A2sec  
V
I2 t  
508  
1.0  
V FM  
Maximum Forward Voltage Per Diode @17.5A (Note 1)  
TC=25℃  
10  
Maximum DC Reverse Current at Rated DC Blocking Voltage Per  
Diode(Note 2)  
IRRM  
uA  
pF  
℃
TC=150℃  
500  
C J  
TJ  
75  
Typical Junction Capacitance Per Diode (Note 3)  
Operating Junction Temperature Range  
-55 to +150  
-55 to +150  
TSTD  
Storage Temperature Range  
Between junction and ambient, Without  
heatsink  
R
22  
Θja  
Typical thermal resistance (Note 4)  
℃/W  
Between junction and case, With heatsink  
R
0.8  
θJC  
Notes:  
1. Pulse test: 300 μs pulse width,1% duty cycle  
Pulse test: pulse width≤40ms  
2.  
3. Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.  
4. Device mounted on 50mm x 50mm x 1.6mm Cu Plate Heatsink.  
Http://www.nhel.com.cn  
Data: 2014/10/20  
Rev.: A/1  
Page:  
1
of  
3
123

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