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GBJ3502-G PDF预览

GBJ3502-G

更新时间: 2024-11-07 00:58:27
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上华 - COMCHIP /
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描述
Glass Passivated Bridge Rectifiers

GBJ3502-G 数据手册

 浏览型号GBJ3502-G的Datasheet PDF文件第2页浏览型号GBJ3502-G的Datasheet PDF文件第3页 
Glass Passivated Bridge Rectifiers  
GBJ35005-G Thru. GBJ3510-G  
Reverse Voltage: 50 to 1000V  
Forward Current: 35 A  
RoHS Device  
GBJ  
Features  
-Rating to 1000V PRV.  
Φ0.134(3.4)  
Φ0.122(3.1)  
0.189(4.80)  
0.173(4.40)  
1.193(30.3)  
1.169(29.7)  
-Ideal for printed circuit board.  
0.150(3.80)  
0.118(3.00)*45°  
0.134(3.40)  
-Low forward voltage drop.  
-High current capability.  
-UL recognized file # E349301  
R
_
+
~
~
0.106(2.7)  
0.096(2.3)  
0.094(2.4)  
0.078(2.0)  
0.114(2.90)  
0.098(2.50)  
Mechanical Data  
0.043(1.1)  
0.035(0.9)  
-Epoxy: UL 94V-0 rate flame retardant.  
-Case: Molded plastic, GBJ  
-Mounting position: Any  
0.031(0.80)  
0.023(0.60)  
0.402(10.2)  
0.386(9.8) 0.287(7.3) 0.287(7.3)  
0.303(7.7) 0.303(7.7)  
SPACING  
-Weight: 6.81grams  
Dimensions in inches and (millimeter)  
Maximum ratings and electrical characteristics  
Rating at 25°C ambient temperature unless otherwise specified.  
Single phase, half wave ,60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
GBJ  
35005-G  
GBJ  
3501-G  
GBJ  
3502-G  
GBJ  
3504-G  
GBJ  
3506-G  
GBJ  
3508-G  
GBJ  
3510-G  
Symbol  
Parameter  
Unit  
Maximum recurrent peak reverse voltage  
Maximum RMS voltage  
V
RRM  
RMS  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
V
Maximum DC blocking voltage  
V
DC  
100  
1000  
Maximum average forward (with heatsink Note2)  
rectified current @Tc=100°C (without hestsink)  
35  
5
I
(AV)  
A
A
Peak forward surage current ,  
8.3ms single falf sine-wave  
IFSM  
400  
super imposed on rated load (JEDEC Method)  
Maximum forward voltage at 17.5A DC  
VF  
1.1  
V
@TJ=25°C  
@TJ=125°C  
Maximum DC reverse current  
at rated DC blocking voltage  
10  
500  
μA  
IR  
2
I2 t rating for fusing (t<8.3ms)  
I2t  
510  
85  
A s  
Typical junction capacitance per element (Note 1)  
Typical thermal resistance (Note 2)  
Operating temperature range  
pF  
°C/W  
°C  
C
J
RθJC  
0.6  
TJ  
-55 to +150  
-55 to +150  
Storage temperature range  
Notes:  
TSTG  
°C  
1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.  
2. Device mounted on 300mm*300mm*1.6mm Cu plate heatsink.  
Company reserves the right to improve product design , functions and reliability without notice.  
REV: A  
Page 1  
QW-BBR88  
Comchip Technology CO., LTD.  

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