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GBJ25K-LF PDF预览

GBJ25K-LF

更新时间: 2024-11-11 19:58:55
品牌 Logo 应用领域
WTE 局域网二极管
页数 文件大小 规格书
4页 55K
描述
Bridge Rectifier Diode, 1 Phase, 25A, 800V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, GBJ-6, 4 PIN

GBJ25K-LF 数据手册

 浏览型号GBJ25K-LF的Datasheet PDF文件第2页浏览型号GBJ25K-LF的Datasheet PDF文件第3页浏览型号GBJ25K-LF的Datasheet PDF文件第4页 
WTE  
POWER SEMICONDUCTORS  
Pb  
GBJ25A – GBJ25M  
25A GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER  
Features  
!
Glass Passivated Die Construction  
!
!
!
!
!
!
Low Forward Voltage Drop  
High Current Capability  
High Reliability  
High Surge Current Capability  
Ideal for Printed Circuit Boards  
Recognized File # E157705  
A
G
GBJ-6  
Dim  
A
B
C
D
E
Min  
29.7  
19.7  
Max  
30.3  
20.3  
5.0  
B
D
C
+
~
~
-
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ H  
K
17.0  
3.8  
18.0  
4.2  
J
E
G
H
J
3.1Ø  
2.3  
3.4Ø  
2.7  
Mechanical Data  
P
R
R
!
!
Case: GBJ-6, Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
0.9  
1.1  
M
K
L
1.8  
2.2  
N
0.6  
0.8  
!
!
!
!
!
Polarity: As Marked on Body  
Weight: 7.0 grams (approx.)  
Mounting Position: Any  
Mounting Torque: 10 cm-kg (8.8 in-lbs) Max.  
Lead Free: For RoHS / Lead Free Version,  
Add “-LF” Suffix to Part Number, See Page 4  
M
N
P
4.4  
4.8  
3.4  
3.8  
S
G
9.8  
10.2  
7.7  
R
S
7.3  
10.8  
2.3  
11.2  
2.7  
T
T
L
All Dimensions in mm  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
GBJ  
25A  
GBJ  
25B  
GBJ  
25D  
GBJ  
25G  
GBJ  
25J  
GBJ  
25K  
GBJ  
25M  
Characteristic  
Symbol  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
50  
35  
100  
70  
200  
140  
400  
600  
420  
800  
560  
1000  
700  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
280  
25  
V
A
Average Rectified Output Current @TC = 100°C  
(Note 1)  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave superimposed on  
rated load (JEDEC Method)  
IFSM  
350  
A
Forward Voltage per diode  
@IF = 12.5A  
VFM  
IR  
1.05  
V
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TA = 25°C  
@TA = 125°C  
10  
350  
µA  
Typical Thermal Resistance per leg (Note 2)  
Typical Thermal Resistance per leg (Note 1)  
Operating and Storage Temperature Range  
RJA  
RJC  
22  
1.0  
°C/W  
°C/W  
°C  
Tj, TSTG  
-55 to +150  
Note: 1. Device mounted on 220 x 220 x 1.6mm thick Al plate heatsink.  
2. Device mounted on P.C.B. without heatsink.  
GBJ25A – GBJ25M  
1 of 4  
© 2006 Won-Top Electronics  

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