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GBJ2510F PDF预览

GBJ2510F

更新时间: 2024-11-12 01:03:15
品牌 Logo 应用领域
扬杰 - YANGJIE /
页数 文件大小 规格书
4页 149K
描述
Bridge Rectifiers

GBJ2510F 数据手册

 浏览型号GBJ2510F的Datasheet PDF文件第2页浏览型号GBJ2510F的Datasheet PDF文件第3页浏览型号GBJ2510F的Datasheet PDF文件第4页 
RoHS  
GBJ25005F THRU GBJ2510F  
Bridge Rectifiers  
COMPLIANT  
Features  
UL recognition, file #E230084  
Thin single in-line package  
High surge current capability  
Solder dip 275 °C max. 7 s, per JESD 22-B106  
Typical Applications  
General purpose use in high frequency AC/DC bridge full wave  
rectification  
for switching power supply, home appliances, office  
equipment, industrial automation applications.  
Mechanical Data  
ackage: 6KBJ  
P
Molding compound meets UL 94 V-0 flammability  
rating, RoHS-compliant  
Terminals: Tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
As marked on body  
Polarity:  
-
+
~
~
(T =25Unless otherwise specified  
Maximum Ratings  
a
GBJ2501F GBJ2502F GBJ2504F GBJ2506F GBJ2508F GBJ2510F  
PARAMETER  
SYMBOL UNIT GBJ25005F  
GBJ2501F GBJ2502F GBJ2504F GBJ2506F GBJ2508F GBJ2510F  
Device marking code  
GBJ25005F  
V
Repetitive peak reverse voltage  
V
A
A
50  
100  
200  
400  
600  
800  
1000  
RRM  
With heatsink  
Average rectified output  
current @60Hz sine wave,  
R-load,  
25  
T =87℃  
c
I
O
Without heatsink  
3.5  
T
=25℃  
a
Surge(non-repetitive)forward current  
@60Hz half sine wave, 1 cycle, Tj=25℃  
I
FSM  
I2t  
350  
Current squared time  
@1mst8.3ms Tj=25, Rating of per diode  
A2s  
508  
Storage temperature  
T
-55 ~+150  
stg  
Junction temperature  
Dielectric strength  
T
j
-55 ~+150  
V
KV  
2.5  
8
dis  
@
,
terminals to case AC 1 minute  
Mounting torque  
Tor  
kg·cm  
@
recommend torque5kg·cm  
T =25Unless otherwise specified)  
Electrical Characteristics  
a
TEST  
CONDITIONS  
GBJ2501F GBJ2502F GBJ2504F GBJ2506F GBJ2508F GBJ2510F  
PARAMETER  
SYMBOL  
GBJ25005F  
UNIT  
Maximum instantaneous forward  
voltage drop per diode  
V
F
V
1.3  
10  
I
=12.5A  
FM  
Maximum DC reverse current  
at rated DC blocking voltage per diode  
I
RRM  
V
=V  
μA  
RM RRM  
IF=0.5A  
IRM=1A  
Reverse Recovery Time  
Trr  
150  
250  
500  
ns  
IRR=0.25A  
1 / 4  
S-B257  
Rev.2.0, 18-Aug-15  
Yangzhou Yangjie Electronic Technology Co., Ltd.  
www.21yangjie.com  

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