Datasheet > GBJ2506F

GBJ2506F

更新时间： 2024-02-08 21:30:43

品牌	Logo	应用领域
虹扬 - HY		局域网二极管
页数	文件大小	规格书
2页	41K
描述
Bridge Rectifier Diode, 1 Phase, 4.2A, 600V V(RRM), Silicon, PLASTIC, GBJ, 4 PIN

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GBJ2506F 技术参数

生命周期：	Contact Manufacturer	包装说明：	R-PSFM-T4
Reach Compliance Code：	unknown	风险等级：	5.14
最小击穿电压：	600 V	配置：	BRIDGE, 4 ELEMENTS
二极管元件材料：	SILICON	二极管类型：	BRIDGE RECTIFIER DIODE
JESD-30 代码：	R-PSFM-T4	最大非重复峰值正向电流：	350 A
元件数量：	4	相数：	1
端子数量：	4	最高工作温度：	150 °C
最低工作温度：	-55 °C	最大输出电流：	4.2 A
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	最大重复峰值反向电压：	600 V
表面贴装：	NO	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	Base Number Matches：	1

GBJ2506F 数据手册

GBJ2506F

GLASS PASSIVATED

BRIDGE RECTIFIERS

REVERSE VOLTAGE

FORWARD CURRENT - 25 Amperes

- 600Volts

GBJ

FEATURES

●Rating 600V PRV

? .134(3.4)

? .122(3.1)

● Ideal for printed circuit board

.189(4.8)

1.193(30.3)

1.169(29.7)

.173(4.4)

.150(3.8)

.134(3.4)

●Low forward voltage drop,high current capability

●Reliable low cost construction utilizing molded plastic

technique results in inexpensive product

.118(3.0)*45°

●The plastic material has UL flammability

classification 94V-0

.106(2.7)

.096(2.3)

.094(2.4)

.078(2.0)

.043(1.1)

.035(0.9)

.114(2.9)

.098(2.5)

.031(0.8)

.023(0.6)

.402(10.2)

.386(9.8)

.303(7.7).303(7.7)

SPACING

.287(7.3)

Dimensions in inches and (milimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25℃ ambient temperature unless otherwise specified.

Single phase, half wave ,60Hz, resistive or inductive load.

For capacitive load, derate current by 20%

GBJ2506F

600

SYMBOL

UNIT

CHARACTERISTICS

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

VRRM

VRMS

VDC

420

600

Maximum DC Blocking Voltage

25.0

4.2

Maximum Average Forward

(with heatsink Note 2)

I(AV)

Rectified Current @ TC=100℃ (without heatsink)

Peak Forward Surge Current

IFSM

350

8.3ms Single Half Sine-Wave

Super Imposed on Rated Load (JEDEC Method)

0.95

Maximum Forward Voltage at 12.5A DC

10.0

500

Maximum DC Reverse Current

at Rated DC Blocking Voltage

@ TJ=25℃

μA

@ TJ=125℃

I²t

A²s

I²t Rating for Fusing (t<8.3ms)

510

Typical Junction Capacitance Per Element (Note1)

Operating Temperature Range

-55 to +150

℃

Storage Temperature Range

TSTG

NOTES: 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

2.Device mounted on 300mm*300mm*1.6mm Cu plate heatsink.

REV. 1, 18-Oct-2013

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