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GBJ2506-G

更新时间: 2024-11-21 07:18:03
品牌 Logo 应用领域
上华 - COMCHIP /
页数 文件大小 规格书
4页 76K
描述
Glass Passivated Bridge Rectifiers

GBJ2506-G 数据手册

 浏览型号GBJ2506-G的Datasheet PDF文件第2页浏览型号GBJ2506-G的Datasheet PDF文件第3页浏览型号GBJ2506-G的Datasheet PDF文件第4页 
Glass Passivated Bridge Rectifiers  
Comchip  
S M D D i o d e S p e c i a l i s t  
GBJ25005-G Thru. GBJ2510-G  
Reverse Voltage: 50 to 1000V  
Forward Current: 25.0A  
RoHS Device  
GBJ  
Features  
- Rating to 1000V PRV.  
-Ideal for printed circuit board  
-Low forward voltage drop, high current capability.  
Φ0.134(3.4)  
Φ0.122(3.1)  
0.189(4.8)  
0.173(4.4)  
1.193(30.3)  
1.169(29.7)  
0.150(3.8)  
0.118(3.00)*45°  
0.134(3.4)  
_
~
+
~
0.106(2.7)  
0.096(2.3)  
Mechanical Data  
-Epoxy: U/L 94-V0 rate flame retardant.  
0.094(2.4)  
0.114(2.9)  
0.098(2.5)  
0.078(2.0)  
0.043(1.1)  
0.035(0.9)  
-Case: Molded plastic, GBJ  
0.031(0.8)  
0.023(0.6)  
-Mounting position: Any  
-Weight: 6.81grams  
0.402(10.2)  
0.386(9.8) 0.287(7.3) 0.287(7.3)  
0.303(7.7) 0.303(7.7)  
SPACING  
Dimensions in inches and (millimeter)  
Maximum ratings and electrical characteristics  
Rating at 25 OC ambient temperature unless otherwise specified.  
Single phase, half wave ,60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
GBJ  
25005-G  
GBJ  
2501-G  
GBJ  
2502-G  
GBJ  
2504-G  
GBJ  
2506-G  
GBJ  
2508-G  
GBJ  
2510-G  
Symbol  
Parameter  
Unit  
Maximum Recurrent Peak Reverse Voltage  
V
RRM  
RMS  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
V
Maximum RMS Voltage  
V
DC  
100  
1000  
Maximum DC Blocking Voltage  
25.0  
4.2  
Maximum Average Forward (With heatsink Note2)  
Rectified Current @Tc=100°C (without hestsink)  
I
(AV)  
A
A
Peak Forward Surage Current ,  
IFSM  
8.3ms Single Half Sine-Wave  
350  
Super Imposed On Rated Load (JEDEC Method)  
Maximum Forward Voltage at 12.5A DC  
1.1  
VF  
V
@TJ=25°C  
@TJ=125°C  
10.0  
500  
Maximum DC Reverse Current  
At Rate DC Blocking Voltage  
μA  
IR  
I2 T Rating for Fusing(t<8.3ms)  
A2s  
pF  
I2t  
510  
Typical Junction Capacitandce Per Element  
(Note 1)  
C
J
85  
OC/W  
OC  
Typical Thermal Resistance (Note 2)  
Operating Temperature Range  
Storage Temperature Range  
RθJA  
0.6  
-55 to +150  
-55 to +150  
TJ  
TSTG  
OC  
Notes:  
1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.  
2. Device mounted on 300mm*300mm*1.6mm Cu plate heatsink.  
REV:C  
Page 1  
QW-BBR60  
Comchip Technology CO., LTD.  

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